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Sangjoon Park
Institution:
Wonik IPS (South Korea)
Observed institution:
Wonik IPS (South Korea)
ORCID:
0000-0002-4271-4605
Observed ORCID:
0000-0002-4271-4605
OpenAlex ID:
A5041641009
Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study
2023
·
Romel Hidayat
, Khabib Khumaini
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
17
Surface reaction during thermal atomic layer etching of aluminum oxide films using fluorine radicals and trimethylaluminum
2023
·
Yewon Kim
, Okhyeon Kim
, et al.
·
Applied Surface Science
·
10
Atomic Layer Etching of Al2O3 Using F Radical and Al Precursors: Surface Reaction and Reaction Mechanism Study
2023
·
Yewon Kim
, Gyejun Cho
, et al.
·
ECS Meeting Abstracts
·
1
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Works count:
3
Citation count:
28
H-index:
2
I10-index:
2
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