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Chamseddine Bouhafs

Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper
2021 · Chamseddine Bouhafs, Sergio Pezzini, et al. · Carbon · 40
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Morphological and electronic properties of epitaxial graphene on SiC
2014 · R. Yakimova, T. Iakimov, et al. · Physica B Condensed Matter · 37
In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
2017 · Sean Knight, Tino Hofmann, et al. · Scientific Reports · 34
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Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
2017 · C. Bouhafs, A.A. Zakharov, et al. · Carbon · 28
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Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
2015 · C. Bouhafs, V. Darakchieva, et al. · Journal of Applied Physics · 20
Effect of nitrogen on the GaAs0.9−xNxSb0.1 dielectric function from the near-infrared to the ultraviolet
2010 · N. Ben Sedrine, C. Bouhafs, et al. · Applied Physics Letters · 16
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Decoupling and ordering of multilayer graphene on C-face 3C-SiC(111)
2016 · C. Bouhafs, V. Stanishev, et al. · Applied Physics Letters · 13
Cavity-enhanced optical Hall effect in epitaxial graphene detected at terahertz frequencies
2016 · Nerijus Armakavicius, Chamseddine Bouhafs, et al. · Applied Surface Science · 12
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Stacking Relations and Substrate Interaction of Graphene on Copper Foil
2021 · Philip Schädlich, Florian Speck, et al. · Advanced Materials Interfaces · 11
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Resolving mobility anisotropy in quasi-free-standing epitaxial graphene by terahertz optical Hall effect
2020 · Nerijus Armakavicius, Philipp Kühne, et al. · Carbon · 9
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Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation
2021 · Vallery Stanishev, Nerijus Armakavicius, et al. · Applied Sciences · 8
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Origin of layer decoupling in ordered multilayer graphene grown by high-temperature sublimation on C-face 4H-SiC
2020 · Ingemar Persson, Nerijus Armakavicius, et al. · APL Materials · 6
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Optical properties of GaAs0.9-xNxSb0.1 alloy films studied by spectroscopic ellipsometry
2010 · N. Ben Sedrine, C. Bouhafs, et al. · Thin Solid Films · 6
Self‐Powered UVC and X‐Ray Photodetection in Single Sn‐Doped β‐Ga 2 O 3 Microwire Schottky Diodes
2025 · Chamseddine Bouhafs, Daniel Carrasco, et al. · Advanced Materials Technologies · 3
Structural and Electronic Properties of Graphene on 4H- and 3C-SiC
2016 · Chamseddine Bouhafs · Linköping studies in science and technology. Dissertations · 3
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Field Effect Transistors Based on α‐MoO 3 Exfoliated Crystals: Fabrication, Functionalization and Characterization
2025 · Daniela R. Pereira, Chamseddine Bouhafs, et al. · physica status solidi (RRL) - Rapid Research Letters · 2
Ultraviolet Photodetectors and Field‐Effect Transistors Based on β‐Ga 2 O 3 Nanomembranes Produced by Ion‐Beam‐Assisted Exfoliation
2025 · Miguel C. Pedro, Duarte M. Esteves, et al. · physica status solidi (RRL) - Rapid Research Letters · 2
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C面4H‐SiC上の数層グラフェンの界面特性,積層秩序とデカップリングのマルチスケール研究【Powered by NICT】
2017 · C Bouhafs, A A Zakharov, et al. · Carbon
Works count: 18
Citation count: 250
H-index: 9
I10-index: 9
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