Author

M. Attari

Institution: University of Sciences and Technology Houari Boumediene

Observed institution: University of Sciences and Technology Houari Boumediene

OpenAlex ID: A5042104132

Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si

2002 · S. Solmi, M. Attari, et al. · Applied Physics Letters · 12

Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation

2004 · D. Nobili, S. Solmi, et al. · Journal of Applied Physics · 5

Works count: 2

Citation count: 17

H-index: 2

I10-index: 1