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Jun-Hyeok Yim
Institution:
Hongik University
Observed institution:
Hongik University
ORCID:
0000-0002-1018-6131
Observed ORCID:
0000-0002-1018-6131
OpenAlex ID:
A5042399133
P-GaN/p-AlGaN/AlGaN/GaN Heterojunction Field-Effect Transistor With a Threshold Voltage of 6 V
2024
·
Dong-Guk Kim
, Jun-Hyeok Yim
, et al.
·
IEEE Electron Device Letters
·
20
Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication
2023
·
Hyeon-Ji Kim
, Jun-Hyeok Yim
, et al.
·
Electronics
·
11
PDF
Recess-Free E-Mode AlGaN/GaN MIS-HFET with Crystalline PEALD AlN Passivation Process
2023
·
Won-Ho Jang
, Jun-Hyeok Yim
, et al.
·
Electronics
·
5
PDF
Monolithic E/D-mode P-GaN/AlGaN/GaN HFETs using reactivation annealing process
2024
·
Yeo-Reum Yang
, Jun-Hyeok Yim
, et al.
·
Materials Science in Semiconductor Processing
·
3
Improved On-Resistance Characteristics in P-GaN/AlGaN/GaN HEMTs via Sputtered Boron Nitride Dielectric Film
2025
·
Jun-Hyeok Yim
, Jinhyeok Pyo
, et al.
·
IEEE Journal of the Electron Devices Society
·
2
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
2021
·
Tae-Hyeon Kim
, Won-Ho Jang
, et al.
·
Micromachines
·
2
PDF
E-Mode p-GaN/AlGaN/GaN HEMT With Diode-Engineered Gate Configuration for Extended Gate Voltage Swing
2026
·
Jun-Hyeok Yim
, Myeongsu Chae
, et al.
·
IEEE Electron Device Letters
·
1
Threshold voltage engineering via diode-embedded p-GaN gate HEMTs
2026
·
Jun-Hyeok Yim
, Myeongsu Chae
, et al.
·
Semiconductor Science and Technology
PDF
Current Enhancement of AlGaN/GaN Heterojunction Using Atomic Layer Deposition AlN Film
2021
·
Won-Ho Jang
, Tea-Hyun Kim
, et al.
·
Journal of the Institute of Electronics and Information Engineers
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Works count:
9
Citation count:
44
H-index:
3
I10-index:
2
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