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Shane R. Stein

Observed names: S. R. Stein, Shane R Stein, Shane Stein, Stein, Shane, Stein, Shane Ryan
ORCID: 0009-0001-1763-5403
Observed ORCID: 0009-0001-1763-5403
OpenAlex ID: A5042910751
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
2022 · Dolar Khachariya, Shane Stein, et al. · Applied Physics Express · 42
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Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing
2023 · Shane R. Stein, Dolar Khachariya, et al. · IEEE Transactions on Electron Devices · 27
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress
2024 · S. R. Stein, J. Kim, et al. · IEEE International Reliability Physics Symposium proceedings · 10
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method
2024 · Philipp Steinmann, Daniel J. Lichtenwalner, et al. · IEEE International Reliability Physics Symposium proceedings · 8
Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
2023 · Shane R. Stein, Dolar Khachariya, et al. · Applied Physics Express · 6
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Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor
2024 · Rohan Sengupta, Brian Little, et al. · Applied Physics Letters · 5
Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
2025 · Suman Das, Daniel J. Lichtenwalner, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
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Temperature Coefficients for Impact Ionization in Silicon Derived From Temperature Coefficients of Avalanche Voltage
2024 · Philipp Steinmann, Daniel Lichtenwalner, et al. · IEEE Transactions on Electron Devices · 2
Design and performance analysis of GaN vertical JFETs with ion-implanted gates
2022 · Shane R Stein, Dolar Khachariya, et al. · Semiconductor Science and Technology · 2
The Onset of Gate Oxide Hole Generation in SiO 2 on SiC Versus Gate Field and Temperature
2026 · Daniel J. Lichtenwalner, Ayan K. Biswas, et al. · IEEE International Reliability Physics Symposium proceedings · 1
Impact of Positive and Negative High Voltage Gate Stress on Channel Degradation in SiC MOSFETs
2025 · Shane R. Stein, Suman Das, et al. · Key engineering materials · 1
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Comparison Between Epitaxial and Implanted Aluminum-Doped 4H-SiC
2024 · Suman Das, Daniel J. Lichtenwalner, et al. · Journal of Electronic Materials · 1
UV illumination effects on AlGaN/GaN HEMTs for tunable RF oscillators
2021 · Shane Stein, Max Robbins, et al. · IEEE Radio and Wireless Symposium (RWS) · 1
Study of Interface Traps and Scattering Mechanisms in the 4H-SiC MOS Channel Using Gated Hall Measurements
2026 · Suman Das, Daniel J. Lichtenwalner, et al. · Key engineering materials
Insight into Bias-Temperature Instability of SiC MOSFETs Using Charge Pumping and Triple-Sense Threshold Measurements
2026 · Shane R. Stein, Suman Das, et al. · Key engineering materials
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
2026 · Jeff Joohyung Kim, Jae Hyung Park, et al. · Key engineering materials
The onset of Gate Oxide Hole Generation in SiO2 on SiC versus Gate Field and Temperature
2026 · IEEE International Symposium on Reliability Physics 2026, Biswas, Ayan, et al. · Underline Science Inc.
Works count: 22
Citation count: 108
H-index: 5
I10-index: 3
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