Get started
Author

L. Chandrasekar

Observed name: L Chandrasekar
ORCID: 0000-0001-7305-5748
Observed ORCID: 0000-0001-7305-5748
OpenAlex ID: A5042923616
Label Free DNA Detection Techniques Using Dielectric Modulated FET: Inversion or Tunneling?
2020 · Rathlavath Priyanka, L. Chandrasekar, et al. · IEEE Sensors Journal · 37
Implementation of Hough Transform for image processing applications
2014 · L. Chandrasekar, G. Durga · International Conference on Communications and Signal Processing (ICCSP) · 26
Is accumulation or inversion mode dielectric modulated FET better for label-free biosensing?: A comparative investigation
2021 · Akhil Sariki, K. Venkata Rao, et al. · AEU - International Journal of Electronics and Communications · 11
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
2022 · Rameez Raja Shaik, L. Chandrasekar, et al. · Microelectronics Journal · 9
A Robust-Compact Model to Emulate Neuro-Mimetic Dynamics With Doped-HfO 2 Ferroelectric-FET Based Neurons
2023 · Rameez Raja Shaik, L Chandrasekar, et al. · IEEE Transactions on Nanotechnology · 8
Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap
2021 · L. Chandrasekar, K. P. Pradhan · IEEE Transactions on Electron Devices · 8
Carrier Density and Quantum Capacitance Model for Doped Graphene
2020 · L Chandrasekar, K P Pradhan · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 8
A Study of Workfunction Variation in Pocket Doped FD-SOI Technology Towards Temperature Analysis
2020 · Rameez Raja Shaik, G. Arun, et al. · Silicon · 7
Computationally Efficient Region-Wise Potential- Based Extremely Closed-Form Analytical Modeling of B/N Substitution Doped GFETs
2022 · L. Chandrasekar, K. P. Pradhan · IEEE Transactions on Electron Devices · 5
Memoryless linearity in undoped and B-doped graphene FETs: A relative investigation to report improved reliability
2021 · L. Chandrasekar, K.P. Pradhan · Microelectronics Reliability · 4
Modeling and Investigation of Electronic Transport Properties of Boron or Nitrogen Substitution Doped Single Layer Graphene
2021 · L Chandrasekar, K P Pradhan · IEEE Nanotechnology Materials and Devices Conference (NMDC) · 2
An Analytical Model to Emulate the Biological Synapses Using B or N Substitution Doped Graphene FET With Hysteresis Engineering
2022 · L Chandrasekar, Rameez Raja Shaik, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 1
Modeling the Electrostatics of 2-Terminal Boron or Nitrogen Substitution Doped Metal-Insulator-Graphene (MIG) Structure
2020 · L Chandrasekar, K P Pradhan · IEEE International Conference on Emerging Electronics (ICEE) · 1
Large Signal Analytical Capacitance Model of B-doped Graphene FET for RF Applications
2026 · Anchal Chaudhary, Avinash Choudhary, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Device and Circuit Level Compact Model of B/N Doped Graphene FET for RF Applications
2025 · Anchal Chaudhary, Avinash Choudhary, et al. · IEEE International Conference on Emerging Electronics (ICEE)
Corrections to “Label Free DNA Detection Techniques Using Dielectric Modulated FET: Inversion or Tunneling?”
2025 · Rathlavath Priyanka, L. Chandrasekar, et al. · IEEE Sensors Journal
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity
2024 · L Chandrasekar, Rameez Raja Shaik, et al. · Semiconductor Science and Technology
A Robust-Compact Model to Imitate the Neuronal Dynamics with 2T based FeFET-MOSFET Capturing Temperature Effects
2022 · Rameez Raja Shaik, L Chandrasekar, et al. · IEEE International Conference on Emerging Electronics (ICEE)
Comparative Study on Nonlinearity of Doped and Undoped GFET using DC Characteristics
2019 · L Chandrasekar, K P Pradhan, et al. · IEEE India Conference
Works count: 19
Citation count: 127
H-index: 7
I10-index: 3
Year
Topic
Type