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D. Richman

Observed names: D Richman, David Richman, David. Richman, Richman, D.
Institution: RCA (United States)
OpenAlex ID: A5043508674
Concentration Gradients for Diffusion of Vapors in Glassy Polymers and their Relation to Time Dependent Diffusion Phenomena1,2
1960 · F. A. Long, David Richman · Journal of the American Chemical Society · 292
Dissociation pressures of GaAs, GaP and InP and the nature of III–V melts
1963 · D. Richman · Journal of Physics and Chemistry of Solids · 93
Measurement of Concentration Gradients for Diffusion of Vapors in Polymers1,2
1960 · David Richman, F. A. Long · Journal of the American Chemical Society · 63
Cellophane-Dye Dosimeter for 105 to 107 Roentgen Range
1956 · E. J. Henley, David. Richman · Analytical Chemistry · 57
The preparation and properties of vapor-grown In1−xGax P
1971 · C. J. Nuese, D. Richman, et al. · Metallurgical Transactions · 47
Self-diffusion of Sodium in a Cation Exchange Resin.
1956 · David Richman, Henry C. Thomas · The Journal of Physical Chemistry · 29
Vapor Phase Growth and Properties of Aluminum Phosphide
1968 · D. Richman · Journal of The Electrochemical Society · 28
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Low-Temperature Epitaxial Growth of Single Crystalline Silicon from Silane
1969 · David Richman, Robert H. Arlett · Journal of The Electrochemical Society · 20
Dielectric and interface properties of pyrolytic aluminum oxide films on silicon substrates
1971 · M. T. Duffy, J. E. Carnes, et al. · Metallurgical Transactions · 19
Growth of homoepitaxial silicon at low temperatures using silane-helium mixtures
1971 · Y. S. Chiang, D. Richman · Metallurgical Transactions · 18
The Heats of Fusion of InSb, InAs, GaAs, and InP
1965 · D. Richman, E. F. Hockings · Journal of The Electrochemical Society · 16
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Vapor-Phase Growth of Several III–V Compound Semiconductors
1971 · J. J. Tietjen, V. S. Ban, et al. · Journal of Vacuum Science and Technology · 9
Crystal Growth by Chemical Transport Reactions II: Equilibrium Measurements in the System Cadmium Sulfide‐Iodine
1962 · R. Nitsche, D. Richman · Zeitschrift für Elektrochemie Berichte der Bunsengesellschaft für physikalische Chemie · 2
Epitaxial solar cells on titanium-doped silicon substrates
1980 · R. V. D’Aiello, P. H. Robinson, et al. · Journal of Electronic Materials · 1
Epitaxial solar cells on metallurgical grade silicon substrates
1980 · P. H. Robinson, R.V. D'Aiello, et al. · NASA Technical Reports Server (NASA) · 1
Epitaxial solar cells on low-cost silicon substrates
1978 · P. H. Robinson, R.V. D'Aiello, et al. · NASA Technical Reports Server (NASA) · 1
Epitaxial silicon growth for solar cells
1978 · R.V. D'Aiello, P. H. Robinson, et al. · 1
Epitaxial silicon growth for solar cells. Final report
1979 · R V D'Aiello, P H Robinson, et al.
Epitaxial silicon growth for solar cells. Quarterly report No. 3, April 1--June 30, 1978
1978 · R V D'Aiello, P H Robinson, et al.
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Epitaxial silicon growth for solar cells. Quarterly report No. 2
1978 · R V D'Aiello, B W Faughnan, et al.
Epitaxial silicon growth for solar cells. Quarterly report No. 1
1978 · R V D'Aiello, P H Robinson, et al.
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P-n junctions formed in gallium antimonide
1970 · R. Clough, D. Richman, et al. · NASA Technical Reports Server (NASA)
Visible light electroluminescent diodes of indium-gallium phosphide
1970 · R. Clough, D. Richman, et al. · NASA STI Repository (National Aeronautics and Space Administration)
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Growth of single-crystal gallium nitride
1970 · R. Clough, D. Richman, et al. · NASA Technical Reports Server (NASA)
Vapor phase growth technique and system for several III-V compound semiconductors Interim scientific report
1969 · R. Clough, Arthur Dreeben, et al. · NASA Technical Reports Server (NASA)
Works count: 29
Citation count: 697
H-index: 11
I10-index: 11
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