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Author

Kyongnam Kim

Observed names: K. N Kim, Kyong-Nam Kim
Institution: Daejeon University
Observed institution: Daejeon University
ORCID: 0000-0002-7225-1330
Observed ORCID: 0000-0002-7225-1330
OpenAlex ID: A5043600251
Etch Characteristics of SiO2 Using Pulsed Triple-Frequency for Ar/C4F6/O2 Capacitive Coupled Plasmas
2016 · M. H Jeon, J. W Park, et al. · Journal of Nanoscience and Nanotechnology · 13
Cryogenic Etching in Advanced Electronics Manufacturing: Applications and Challenges
2024 · Kyongnam Kim · Applied Science and Convergence Technology · 12
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Clean SiO 2 atomic layer etching based on physisorption of high boiling point perfluorocarbon
2024 · Dain Sung, Hyunwoo Tak, et al. · Nanoscale · 7
A Study on the Development of Real-Time Chamber Contamination Diagnosis Sensors
2024 · Junyeob Lee, Kyongnam Kim · Sensors · 5
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Atomic Layer Etching of SiO2 Utilizing a Radical Generation Module with C4H2F6 Gas
2025 · Eunchong Kang, Hongjun Kim, et al. · Applied Science and Convergence Technology · 1
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Enhanced selective etching of SiON using low-GWP C 3 F 6 as an alternative to CF 4 in low-bias-power inductively coupled plasmas
2026 · Chen Yang, Jiachen Wei, et al. · Semiconductor Science and Technology
Atomic Layer Etching Characteristics of SiO 2 Using Reactive Species Controlled from Low-GWP C 4 H 2 F 6 Isomers
2025 · Jinwoo Choi, Junyeob Lee, et al. · Journal of Nanoelectronics and Optoelectronics
Development of a Cleaning Endpoint Evaluation Sensor to reliably monitor plasma chamber cleaning
2025 · Suyoung Jang, Dohyeon Kim, et al. · Nanotechnology
Author response for "Development of a cleaning endpoint evaluation sensor to reliably monitor plasma chamber cleaning"
2025 · Suyoung Jang, Dohyeon Kim, et al. · Publons reviews and discussion
Mechanistic Analysis and Process Characteristics of Si 3 N 4 and SiO 2 Etching Using C 4 H 2 F 6 Isomers
2025 · Ho June Chang, Jeongoun Bae, et al. · Journal of Nanoelectronics and Optoelectronics
Atomic Layer Etching of SiO 2 Using C 4 F 6 Remote Radical Source Plasma: Effects of Oxygen-Modified Plasma Chemistry
2025 · Jin Woo Choi, Do Hoon Kim, et al. · Journal of Nanoelectronics and Optoelectronics
The Influence of Integration Process on the Imprint in Pt-pzt-pt Ferroelectric Capacitors
1997 · M H Lee, Young‐Ha Hwang, et al. · 半導体・集積回路技術シンポジウム講演論文集
Works count: 12
Citation count: 38
H-index: 4
I10-index: 2
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