Author

Haochen Wang

Institutions: University of Electronic Science and Technology of China, University of California, Santa Barbara, State Key Laboratory of Electronic Thin Films and Integrated Devices

Observed institutions: University of Electronic Science and Technology of China, University of California, Santa Barbara, State Key Laboratory of Electronic Thin Films and Integrated Devices

ORCID: 0000-0002-2578-6316

Observed ORCID: 0000-0002-2578-6316

OpenAlex ID: A5043850431

Unveiling the Pockels coefficient of ferroelectric nitride ScAlN

2024 · Guangcanlan Yang, Haochen Wang, et al. · Nature Communications · 41

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The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique

2022 · Jiarui Chen, Yuanzhang Su, et al. · IEEE Transactions on Electron Devices · 14

A Novel E-Mode GaN p-MISFET with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope

2024 · Kuangli Chen, Shuting Huang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

2024 · Haochen Wang, Kuangli Chen, et al. · Electronics · 1

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Works count: 4

Citation count: 59

H-index: 3

I10-index: 2