Get started
Author

Roman Hrytsak

Observed names: Hrytsak, Roman, R. Hrytsak
ORCID: 0000-0002-5467-0953
Observed ORCID: 0000-0002-5467-0953
OpenAlex ID: A5043871312
Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells
2021 · Julita Smalc-Koziorowska, Ewa Grzanka, et al. · ACS Applied Materials & Interfaces · 39
Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study
2022 · Roman Hrytsak, Pawel Kempisty, et al. · Materials · 20
DFT study on point defects migration through the pseudomorphic and lattice-matched InN/GaN interfaces
2020 · Roman Hrytsak, Pawel Kempisty, et al. · Computational Materials Science · 19
The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
2021 · Mikolaj Grabowski, Ewa Grzanka, et al. · Scientific Reports · 18
PDF
Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers
2021 · Artur Lachowski, Ewa Grzanka, et al. · Journal of Alloys and Compounds · 13
Ab initio studies of early stages of AlN growth process on the oxygen-terminated diamond (111) surface
2018 · M. Sznajder, R. Hrytsak · Diamond and Related Materials · 11
Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system
2022 · Roman Hrytsak, Pawel Kempisty, et al. · New Journal of Physics · 5
PDF
Vacancy complexes in GaN single crystals
2026 · Jakub Čížek, František Hájek, et al. · Materialia · 4
DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces
2021 · Malgorzata Sznajder, Roman Hrytsak · Materials · 3
PDF
Clusters of vacancies in gallium nitride grown by MOCVD
2025 · František Hájek, Jakub Čížek, et al. · Journal of Physics Materials · 2
PDF
Atomistic insights into defect migration in In x Ga 1 − x N / GaN heterostructures: composition and temperature effects
2025 · Roman Hrytsak, Pawel Kempisty, et al. · New Journal of Physics · 1
On the vacancy diffusion from ammonothermally grown GaN to GaN epilayer
2026 · František Hájek, Jakub Čížek, et al. · Materials Science in Semiconductor Processing
Consequences of lateral and horizontal point defect diffusion through interfaces in green semiconductor lasers based on InAlGaN grown on substrates with different dislocation density
2023 · E. Grzanka, R. Hrytsak, et al. · Acta Crystallographica Section A Foundations and Advances
Works count: 15
Citation count: 135
H-index: 6
I10-index: 6
Year
Topic
Type