Author

E. Tounié

Institution: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Observed institution: Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

OpenAlex ID: A5044248912

Band gap energy, nitrogen localized states and GaN-like phonon in heavily doped GaAsN grown by molecular beam epitaxy

2004 · S. Ben Bouzid, F. Bousbih, et al. · Solid State Communications · 8

Works count: 1

Citation count: 8

H-index: 1

I10-index: