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Н. И. Горбачук

Observed names: Gorbachuk, N. I., N. I. GORBACHUK, N. I. Gorbachuk, N.I. Gorbachuk, Nikolay I. Gorbachuk, Горбачук, Н. И.
ORCID: 0000-0002-9396-8146
Observed ORCID: 0000-0002-9396-8146
OpenAlex ID: A5044495442
Negative capacitance (impedance of the inductive type) of silicon p +-n junctions irradiated with fast electrons
2006 · N. A. Poklonski, S. V. Shpakovski, et al. · Semiconductors · 16
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Formation of coloring complexes in glass colored with cerium and titanium oxides
2007 · E. E. Trusova, N. M. Bobkova, et al. · Glass and Ceramics · 13
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
2010 · N. A. Poklonski, N. I. Gorbachuk, et al. · Technical Physics · 11
Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions
2008 · N.A. Poklonski, N.I. Gorbachuk, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11
Impedance Spectroscopy of Polycrystalline Tin Dioxide Films
2016 · D. V. Adamchuck, V. K. Ksenevich, et al. · Devices and Methods of Measurements · 10
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Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions
2010 · N.A. Poklonski, N.I. Gorbachuk, et al. · Microelectronics Reliability · 9
Electrical properties of carbon nanotubes/WS2 nanotubes (nanoparticles) hybrid films
2016 · V.K. Ksenevich, N.I. Gorbachuk, et al. · Nanosystems Physics Chemistry Mathematics · 8
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Nanostructuring of crystalline grains of natural diamond using ionizing radiation
2005 · N. A. Poklonski, T. M. Lapchuk, et al. · Semiconductors · 8
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Optical spectroscopy of the surface of nanoporous diamond films
2011 · A. V. Khomich, M. V. Kanzyuba, et al. · Journal of Applied Spectroscopy · 7
Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+n-junction-defect layer formed by 250MeV krypton implantation
2009 · N.A. Poklonski, N.I. Gorbachuk, et al. · Physica B Condensed Matter · 7
Magnetoresistive effect and impedance spectroscopy of Co‐implanted polyimide
2006 · V. N. Popok, M. G. Lukashevich, et al. · physica status solidi (a) · 7
Electrical Conductivity of Composite Materials Based on Fine-Particle Silicon near the Metal–Insulator Transition
2004 · N. A. Poklonskii, N. I. Gorbachuk, et al. · Inorganic Materials · 7
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
2010 · N. A. Poklonski, N. I. Gorbachuk, et al. · Semiconductors · 5
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Effect of the Moisture Content on the Electrical Conductivity of SiO2/LiCl Xerogels
2001 · N. I. Gorbachuk, V. S. Gurin, et al. · Glass Physics and Chemistry · 5
DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions
2016 · Nikolai A. Poklonski, Nikolay I. Gorbachuk, et al. · Modern Electronic Materials · 4
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Impedance of Single-Walled Carbon Nanotube Fibers
2012 · V. K. Ksenevich, N. I. Gorbachuk, et al. · Fullerenes Nanotubes and Carbon Nanostructures · 4
Effects of Fluences of Irradiation with 107 MeV Krypton Ions on the Recovery Charge of Silicon p+n-Diodes
2011 · N.A. Poklonski, N.I. Gorbachuk, et al. · Acta Physica Polonica A · 4
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Impedance of Si/SiO2 composites in the vicinity of the percolation threshold
2011 · N. A. Poklonski, N. I. Gorbachuk, et al. · Physics of the Solid State · 4
Influence of humidity on the electrophysical properties and charge transfer mechanism in nanoscale diamond-like carbon coatings
2025 · I.A. Zur, J.A. Fedotova, et al. · Carbon · 3
The dependence of the conductivity of SiO2-γ-Fe2O3 film composites on air humidity
2010 · A. V. Adakimchik, N. I. Gorbachuk, et al. · Russian Journal of Physical Chemistry A · 2
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Inductive Type Impedance of Mo/n-Si Barrier Structures Irradiated with Alpha Particles
2023 · N. A. Poklonski, A. I. Kovalev, et al. · Devices and Methods of Measurements · 1
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Design of Peltier Element Based on Semiconductors with Hopping Electron Transfer via Defects
2021 · N. A. Poklonski, S. A. Vyrko, et al. · Devices and Methods of Measurements · 1
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Effect of Hole Extraction from the Base Region of a Silicon p–n–p Transistor on its Reactive Impedance
2019 · N. I. Gorbachuk, N. A. Poklonski, et al. · Devices and Methods of Measurements · 1
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Controlling of Differential Resistance of p–n-Junctions of Bipolar Transistor in Active Mode by Method of Impedance Spectroscopy
2019 · N. I. Gorbachuk, N. A. Poklonski, et al. · Devices and Methods of Measurements · 1
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CALCULATION OF STATIC PARAMETERS OF SILICON DIODE CONTAINING δ-LAYER OF TRIPLE-CHARGED POINT DEFECTS IN SYMMETRIC p–n-JUNCTION
2018 · N. A. Poklonski, A. I. Kovalev, et al. · Devices and Methods of Measurements · 1
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Works count: 66
Citation count: 151
H-index: 8
I10-index: 5
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