Get started
Author

Kumari Neeraj Kaushal

Observed name: Kaushal Kumari Neeraj
ORCID: 0000-0002-1369-2603
Observed ORCID: 0000-0002-1369-2603
OpenAlex ID: A5044628932
Unified Theory of the Capacitance Behavior in LDMOS Devices
2021 · Kumari Neeraj Kaushal, Nihar R. Mohapatra · IEEE Transactions on Electron Devices · 18
A Zero-Cost Technique to Improve ON-State Performance and Reliability of Power LDMOS Transistors
2021 · Kumari Neeraj Kaushal, Nihar R. Mohapatra · IEEE Journal of the Electron Devices Society · 17
PDF
Source Underlap—A Novel Technique to Improve Safe Operating Area and Output-Conductance in LDMOS Transistors
2019 · Mandar S. Bhoir, Kumari Neeraj Kaushal, et al. · IEEE Transactions on Electron Devices · 16
Scalable Substrate Current Model for LDMOS Transistors Based on Internal Drain Voltage
2022 · Kumari Neeraj Kaushal, Virender Dan, et al. · IEEE Transactions on Electron Devices · 14
A Physics-Based Compact Model to Capture Cryogenic Behavior of LDMOS Transistors
2023 · Kumari Neeraj Kaushal, Nihar R. Mohapatra · IEEE Transactions on Electron Devices · 10
Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics
2023 · Yogendra Machhiwar, Garima Gill, et al. · IEEE Transactions on Electron Devices · 8
Behavior of LDMOS transistors at cryogenic temperature - An experiment based analysis
2021 · Kaushal Kumari Neeraj, Mohapatra Nihar Ranjan · International Symposium on VLSI Design and Test (VDAT) · 6
Physics-based parameter extraction methodology for channel doping gradient (CDG) LDMOS transistors based on HiSIM-HV2 model
2021 · Shubham Patil, Kumari Neeraj Kaushal, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Works count: 8
Citation count: 89
H-index: 6
I10-index: 5
Year
Topic
Type