Author

Philip Hens

Observed names: Hens, P., Hens, Philip, P Hens, P. Hens

Observed institutions: Linköping University, Philipps University of Marburg, Friedrich-Alexander-Universität Erlangen-Nürnberg, University of Colorado Boulder, Aixtron (Germany), Nonlinear Control Strategies (United States)

ORCID: 0000-0001-5670-3168

Observed ORCID: 0000-0001-5670-3168

OpenAlex ID: A5044651796

Fluorescent SiC as a new material for white LEDs

2012 · M Syväjärvi, J Müller, et al. · Physica Scripta · 39

Novel type-II material system for laser applications in the near-infrared regime

2015 · C. Berger, C. Möller, et al. · AIP Advances · 35

Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

2008 · Sakwe Aloysius Sakwe, Mathias Stockmeier, et al. · physica status solidi (b) · 27

Nucleation Control of Cubic Silicon Carbide on 6H- Substrates

2011 · Remigijus Vasiliauskas, Maya Marinova, et al. · Crystal Growth & Design · 26

Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds

2011 · P. Hens, V. Jokubavicius, et al. · Materials Letters · 20

Thermal Expansion Coefficients of 6H Silicon Carbide

2008 · Matthias Stockmeier, Sakwe Aloysius Sakwe, et al. · Materials science forum · 20

Large area buffer-free graphene on non-polar (0 0 1) cubic silicon carbide

2014 · Philip Hens, Alexei A. Zakharov, et al. · Carbon · 18

Excitonic transitions in highly efficient (GaIn)As/Ga(AsSb) type-II quantum-well structures

2015 · S. Gies, C. Kruska, et al. · Applied Physics Letters · 17

Broadband and omnidirectional light harvesting enhancement of fluorescent SiC

2012 · Yiyu Ou, Valdas Jokubavicius, et al. · Optics Express · 17

Observation of Lattice Plane Bending during SiC PVT Bulk Growth Using In Situ High Energy X-Ray Diffraction

2010 · Rainer Hock, Katja Konias, et al. · Materials science forum · 15

Effects of source material on epitaxial growth of fluorescent SiC

2011 · V. Jokubavicius, P. Hens, et al. · Thin Solid Films · 14

Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition

2017 · Philip Hens, Ryan Brow, et al. · Thin Solid Films · 12

Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100)

2011 · P. Hens, G. Wagner, et al. · Thin Solid Films · 11

In Situ Observation of Polytype Switches during SiC PVT Bulk Growth by High Energy X-Ray Diffraction

2009 · Peter J. Wellmann, Katja Konias, et al. · Materials science forum · 7

GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient

2016 · Henning Döscher, Philip Hens, et al. · Journal of Crystal Growth · 6

Modeling of the Mass Transport during Homo-Epitaxial Growth of Silicon Carbide by Fast Sublimation Epitaxy

2013 · Thomas Hupfer, Philip Hens, et al. · Materials science forum · 6

The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy

2014 · S Schimmel, M Kaiser, et al. · IOP Conference Series Materials Science and Engineering · 5

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Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor

2023 · Birgit Kallinger, Philip Hens, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4

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Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

2017 · Philip Hens, Ryan Brow, et al. · MRS Advances · 4

On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates

2012 · Valdas Jokubavicius, Björn Lundqvist, et al. · Materials science forum · 4

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

2013 · Saskia Schimmel, Michl Kaiser, et al. · Materials science forum · 3

Bulk Growth of SiC – Review on Advances of SiC Vapor Growth for Improved Doping and Systematic Study on Dislocation Evolution

2009 · Sakwe Aloysius Sakwe, Mathias Stockmeier, et al. · 3

Germanium Incorporation during PVT Bulk Growth of Silicon Carbide

2009 · Philip Hens, Ulrike Künecke, et al. · Materials science forum · 3

Charge transfer luminescence in (GaIn)As/GaAs/Ga(NAs) double quantum wells

2016 · P. Springer, S. Gies, et al. · Journal of Luminescence · 2

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

2011 · Philip Hens, J. Müller, et al. · Materials science forum · 2

Works count: 47

Citation count: 369

H-index: 12

I10-index: 14