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Gleb Lukin

Observed names: G Lukin, G. Lukin, Lukin, G, Lukin, Gleb
ORCID: 0009-0009-3983-4874
Observed ORCID: 0009-0009-3983-4874
OpenAlex ID: A5044807604
Directional melting and solidification of gallium in a traveling magnetic field as a model experiment for silicon processes
2016 · K. Dadzis, G. Lukin, et al. · Journal of Crystal Growth · 29
Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy
2013 · M. Barchuk, C. Röder, et al. · Journal of Crystal Growth · 24
Investigation of GaN layers grown by high temperature vapor phase epitaxy
2014 · G. Lukin, C. Röder, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 14
Numerical Analysis of Gas Flow Instabilities in Simplified Vertical HVPE GaN Reactors
2022 · Markus Zenk, Gleb Lukin, et al. · Crystals · 8
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Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy
2019 · G. Lukin, T. Schneider, et al. · Journal of Crystal Growth · 8
Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps
2017 · Mykhailo Barchuk, Mykhaylo Motylenko, et al. · Journal of Applied Crystallography · 8
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Modified high temperature vapor phase epitaxy for growth of GaN films
2017 · G. Lukin, T. Schneider, et al. · physica status solidi (a) · 8
Design of model experiments for melt flow and solidification in a square container under time-dependent magnetic fields
2016 · D. Meier, G. Lukin, et al. · Journal of Crystal Growth · 8
Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy
2016 · M. Barchuk, G. Lukin, et al. · Journal of Electronic Materials · 6
Studies on high temperature vapor phase epitaxy of GaN
2016 · T. Schneider, G. Lukin, et al. · Journal of Crystal Growth · 5
Stress evolution in thick GaN layers grown by HVPE
2020 · G. Lukin, E. Meissner, et al. · Journal of Crystal Growth · 4
Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy
2012 · G. Lukin, C. Röder, et al. · Crystal Research and Technology · 4
Inspection of Bulk Crystals for Quality Control in Crystal Growth: Assessment of High-Energy X-Ray Transmission Topography and Back-Reflection Topography Pinpointed for Physical Vapor Transport-Grown Aluminum Nitride
2025 · Roland Weingärtner, Boris Epelbaum, et al. · Crystals · 2
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Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layers
2019 · T. Schneider, M. Förste, et al. · Journal of Crystal Growth · 2
Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy
2026 · J. Tomkovič, G. Lukin, et al. · Advanced Engineering Materials · 1
Influence of Ammonia Flow on Microstructural Properties of Polar GaN Layers Grown by HTVPE on Sapphire Substrates
2017 · Mykhailo Barchuk, Mykhaylo Motylenko, et al. · Crystal Research and Technology · 1
Beyond 650 V Dynamic Switching of High Voltage AlGaN/GaN/AlN HEMTs on Monocrystalline AlN Substrates
2025 · Houssam Halhoul, Mihaela Wolf, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
高温気相エピタキシー法(HTVPE)により成長させたGaN層の微細構造欠陥形成に及ぼすアンモニアの影響
2017 · M Barchuk, G Lukin, et al. · Journal of Electronic Materials
時間依存磁場下の正方形容器内の溶融流動と凝固のモデル実験の設計【Powered by NICT】
2017 · Daniel Meier, G Lukin, et al. · Journal of Crystal Growth
Crystallization of gallium in a traveling magnetic field as a model experiment
2015 · Dadzis, K, Lukin, G, et al. · HAL
Using TEM to investigate antiphase disorder in GaP films grown on Si(001)
2008 · T. B. Adams, I. Nemeth, et al. · Springer eBooks
Optical gain in Ga(NAsP)/(BGa)(AsP) multi-quantum-well heterostructures grown lattice-matched on (001) Silicon substrate
2008 · B. Kunert, I. Nemeth, et al. · Conference digest
Monolithic growth of the direct band gap material Ga(NAsP) lattice matched on (001) silicon substrate
2008 · B. Kunert, I. Németh, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate
2008 · B. Kunert, I. Nemeth, et al. · IEEE International Conference on Group IV Photonics (GFP)
Works count: 25
Citation count: 132
H-index: 8
I10-index: 3
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