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Carlos Augusto Bergfeld Mori

Observed names: A. B. Carlos Mori, C. A. B. Mori, C. A. Mori, C.A.B. Mori, C.B. Mori, Carlos A.B. Mori
ORCID: 0000-0002-5602-5472
Observed ORCID: 0000-0002-5602-5472
OpenAlex ID: A5044949197
50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection
2020 · S. Santermans, D. Barge, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Optimization of the Back Enhanced BESOI MOSFET working as a charge-based BioFET sensor
2019 · L. S. Yojo, R. C. Rangel, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 5
ISFET Fabrication and Characterization for Hydrogen Peroxide sensing
2023 · Pedro Henrique Duarte, Ricardo Cardoso Rangel, et al. · Journal of Integrated Circuits and Systems · 4
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Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor
2019 · C. A. B. Mori, P. G. D. Agopian, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 3
DC method for self-heating estimation applied to FinFET
2018 · C. A. B. Mori, P. G. D. Agopian, et al. · Symposium on Microelectronics Technology and Devices · 3
Signal to noise ratio in nanoscale bioFETs
2022 · Carlos Augusto Bergfeld Mori, Koen Martens, et al. · Solid-State Electronics · 2
New method for self-heating estimation using only DC measurements
2018 · C. A. B. Mori, P. G. D. Agopian, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 2
New method for observing self-heating effect using transistor efficiency signature
2017 · C. A. B. Mori, P. G. D. Agopian, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 2
Simple method for detection of the self-heating signature
2017 · C. A. B. Mori, P. G. D. Agopian, et al. · Symposium on Microelectronics Technology and Devices · 2
Study of the UTBB BESOI Tunnel-FET working as a Dual-Technology Transistor
2021 · Carlos Augusto Bergfeld Mori, Paula Ghedini Der Agopian, et al. · Journal of Integrated Circuits and Systems · 1
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Optimization of the Dual-Technology Back-Enhanced Field Effect Transistor
2020 · C. A. B. Mori, P. G. D. Agopian, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 1
New approach for removing the self-heating from MOSFET current using only DC characteristics
2018 · C. A. B. Mori, P. G. D. Agopian, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 1
The Dual-Technology FET: nMOS/pTFET in the same device
2025 · C.A.B. Mori, P.H. Duarte, et al. · Solid-State Electronics
Projeto e fabricação de um BESOI Túnel-FET como elemento biossensor.
2023 · Carlos Augusto Bergfeld Mori · Digital Library of Theses and Dissertations (Universidade de São Paulo)
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Fabrication and Electrical Characterization of ISFET for H2O2 sensing
2022 · Pedro H. Duarte, Ricardo C. Rangel, et al. · Symposium on Microelectronics Technology and Devices
Application of UTBBBE SOI Tunnel-FET as a Dual-Technology Transistor
2019 · A. B. Carlos Mori, G. D. Paula Agopian, et al. · Symposium on Microelectronics Technology and Devices
Experimental analysis and improvement of the DC method for self-heating estimation
2019 · C.A.B. Mori, P.G.D. Agopian, et al. · Solid-State Electronics
Estudo comparativo do efeito de autoaquecimento em transistores FinFET e SOI UTBB.
2018 · Carlos Augusto Bergfeld Mori · Digital Library of Theses and Dissertations (Universidade de São Paulo)
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Improvement of gm/ID Method for Detection of Self-Heating Effects
2018 · Carlos Augusto Bergfeld Mori, Paula Ghedini Der Agopian, et al. · ECS Meeting Abstracts
Improvement of gm/IDMethod for Detection of Self-Heating Effects
2018 · Carlos Augusto Bergfeld Mori, Paula Ghedini Der Agopian, et al. · ECS Transactions
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Works count: 20
Citation count: 35
H-index: 3
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