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Hao Chi
Institution:
Lam Research (United States)
Observed institutions:
Fudan University,
Lam Research (United States)
ORCID:
0009-0002-6912-8021
Observed ORCID:
0009-0002-6912-8021
OpenAlex ID:
A5045010059
Progress report on high aspect ratio patterning for memory devices
2023
·
Meihua Shen
, Thorsten Lill
, et al.
·
Japanese Journal of Applied Physics
·
54
PDF
28-nm CMOS Ultrasound AFE With Split Attenuation for Optimizing Gain-Range, Noise, and Area
2023
·
Xinwei Yu
, Zhi Chen
, et al.
·
IEEE Transactions on Circuits and Systems I Regular Papers
·
10
Enabling Merged 3D NAND Memory Hole and Interlayer Dielectric (ILD) Contact Etches with Deposition and Etch Co-Optimization (DECO)
2025
·
John Hoang
, George Matamis
, et al.
·
IEEE International Memory Workshop (IMW)
·
2
Etch and deposition co-optimization: a pathway to enabling high aspect ratio 3D NAND Flash ONON channel hole patterning
2021
·
Meihua Shen
, John Hoang
, et al.
·
Advanced Etch Technology and Process Integration for Nanopatterning
·
2
Enabling 3D NAND bit cost scaling with merged etches
2026
·
John Hoang
, George Matamis
, et al.
·
Japanese Journal of Applied Physics
Model assisted process development to enable faster 3D-NAND memory hole profile deposition and etch co-optimization
2026
·
Hao Chi
, Calvin Phan
, et al.
·
Advanced Etch Technology and Process Integration for Nanopatterning
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Works count:
6
Citation count:
68
H-index:
2
I10-index:
2
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