Author

Steven Shih

Observed names: S. Shih, S.N. Shih

Institution: Nanya Technology (Taiwan)

Observed institutions: Oregon State University, Nanya Technology (Taiwan)

OpenAlex ID: A5045317087

Investigation on Cu TSV-Induced KOZ in Silicon Chips: Simulations and Experiments

2013 · Ming-Yi Tsai, Pu-Shan Huang, et al. · IEEE Transactions on Electron Devices · 58

Impact of gate-induced drain leakage on retention time distribution of 256 Mbit DRAM with negative wordline bias

2003 · Minchen Chang, Jengping Lin, et al. · IEEE Transactions on Electron Devices · 40

Si–H Bond Breaking Induced Retention Degradation During Packaging Process of 256 Mbit DRAMs With Negative Wordline Bias

2005 · M. Chang, J. Lin, et al. · IEEE Transactions on Electron Devices · 29

An investigation into warpages, stresses and keep-out zone in 3D through-silicon-via DRAM packages

2014 · M.Y. Tsai, P.S. Huang, et al. · Microelectronics Reliability · 16

Design and fabrication of a double bandstop rugate filter grown by plasma-enhanced chemical vapor deposition

1996 · S. Lim, S. Shih, et al. · Thin Solid Films · 13

3D Stacking DRAM using TSV technology and microbump interconnect

2010 · Kee-Wei Chung, Steven Shih, et al. · International Microsystems, Packaging, Assembly and Circuits Technology Conference · 9

Warpage, stresses and KOZ of 3D TSV DRAM package during manufacturing processes

2012 · P. S. Huang, M. Y. Tsai, et al. · International Conference on Electronic Materials and Packaging · 7

The impact of through silicon via proximity on CMOS device

2012 · Hsiu Jao, Y. Y. Lin, et al. · International Microsystems, Packaging, Assembly and Circuits Technology Conference · 7

Determination of TSV-induced KOZ in 3D-stacked DRAMs: Simulations and experiments

2012 · P. S. Huang, M. Y. Tsai, et al. · International Microsystems, Packaging, Assembly and Circuits Technology Conference · 6

Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition

2008 · Chun-I. Hsieh, Tung-Ming Pan, et al. · Applied Surface Science · 5

Enhancement in Thermal Stability of Metal-Insulator-Metal Capacitors for Deep Trench DRAM Application

2008 · Chun-I Hsieh, Tung-Ming Pan, et al. · ECS Transactions · 1

Structural demonstration of cost effective isolation trench fill for sub-110 nm vertical trench DRAM and SOC applications

2004 · S.-W. Yang, W.-S. Liao, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1

Characterization of 300 mm silicon-polished and EPI wafers

1999 · Steven Shih, Chi Au, et al. · Microelectronic Engineering · 1

A novel double patterning approach for 30nm dense holes

2011 · Dennis Shu-Hao Hsu, Walter Wang, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Uni-/Bipolar Resistive Switching and Reset Mechanism of TiN/TiO/TiN Resistance Memory Stacks

2009 · Chun-I Hsieh, Wei-Chia Chen, et al. · ECS Meeting Abstracts

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Investigation on Structural and Electrical Properties of High-k Dielectrics Prepared by Furnace Atomic Layer Deposition with Precursor Cross-flow

2008 · Chun-I Hsieh, Shih-shu Tsai, et al. · ECS Meeting Abstracts

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Oxidation Behavior of ALD Process using H2O and Ozone as Oxidants at Varied Temperatures on TiN Metal Substrates

2008 · Chun-I Hsieh, Tsai-Yu Huang, et al. · ECS Meeting Abstracts

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Highly reliable detection and correction of pinched areas for high transmission phase shift mask

2008 · Chih Li Chen, Chun-Cheng Liao, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Current Status of 300 mm Silicon Wafer Characterization

1998 · Troy Messina, Chi Au, et al. · ASME International Mechanical Engineering Congress and Exposition (IMECE)

Works count: 19

Citation count: 193

H-index: 7

I10-index: 5