2010 · J.G. Laven, H.‐J. Schulze, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 18

Lanthanum implantation for threshold voltage control in metal/high-k devices

2009 · A. Fet, V. Häublein, et al. · Microelectronic Engineering · 11

Channeling in 4H-SiC from an Application Point of View

2019 · Peter Pichler, Tomasz Sledziewski, et al. · Materials science forum · 9

Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications

2011 · Walter Daves, Andreas Krauss, et al. · Journal of Electronic Materials · 9

Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

2010 · A. Fet, V. Häublein, et al. · Applied Physics Letters · 8

Structural and Reliability Analysis of Ohmic Contacts to SiC with a Stable Protective Coating for Harsh Environment Applications

2012 · Walter Daves, Andreas Krauss, et al. · ECS Journal of Solid State Science and Technology · 7

4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications

2012 · Walter Daves, A. Krauss, et al. · Materials science forum · 6

Deep Doping Profiles in Silicon Created by MeV Hydrogen Implantation: Influence of Implantation Parameters

2011 · J. G. Laven, H.-J. Schulze, et al. · AIP conference proceedings · 6

Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks

2009 · A. Fet, V. Häublein, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6

Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide

2003 · A.J. Bauer, P. Mayer, et al. · International Conference on Ion Implantation Technology · 6

Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities

2015 · H. Ch. Alt, H. E. Wagner, et al. · physica status solidi (b) · 4

Purity of Ion Beams: Analysis and Simulation of Mass Spectra and Mass Interferences in Ion Implantation

2011 · Volker Häublein, Heiner Ryssel, et al. · Advances in Materials Science and Engineering · 4

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Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction

2005 · Volker Häublein, Lothar Frey, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4

Investigation of molybdenum contamination in /sup 11/B/sup +/ and /sup 31/P+ implants

2000 · K. Funk, V. Haublein, et al. · International Conference on Ion Implantation Technology · 4

Impact of Al-Ion Implantation on the Formation of Deep Defects in n-Type 4H-SiC

2018 · Julietta Weise, Constantin Csato, et al. · International Conference on Ion Implantation Technology · 3

Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 · Ana Maria Beltran, Sylvie Schamm-Chardon, et al. · Materials science forum · 3

Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks

2011 · A. Fet, V. Häublein, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 3

The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon

2010 · Johannes Laven, Reinhart Job, et al. · ECS Transactions · 3

The Impact of Mass Resolution on Molybdenum Contamination for B, P, BF2, and As Implantations

2006 · Volker Häublein, Lothar Frey, et al. · AIP conference proceedings · 3

Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations

2018 · Christopher Künneth, Simon Kölbl, et al. · Journal of Applied Physics · 2

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Works count: 56

Citation count: 610

H-index: 9

I10-index: 7