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Vitalii I. Sichkovskyi

Observed names: Sichkovskyi, Vitalii, V. I. Sichkovskyi, V. Sichkovsky, V. Sichkovskyi, V. V. Sichkovskyi, V.I. Sichkovskyi, Vitalii Sichkovskyi
ORCID: 0000-0003-4132-5242
Observed ORCID: 0000-0003-4132-5242
OpenAlex ID: A5045496779
Large linewidth reduction in semiconductor lasers based on atom-like gain material
2019 · Tali Septon, Annette Becker, et al. · Optica · 60
Temperature-Insensitive High-Speed Directly Modulated 1.55- $\mu \text{m}$ Quantum Dot Lasers
2016 · Saddam Banyoudeh, Alireza Abdollahinia, et al. · IEEE Photonics Technology Letters · 40
Rabi oscillations and self-induced transparency in InAs/InP quantum dot semiconductor optical amplifier operating at room temperature
2013 · Ouri Karni, Amir Capua, et al. · Optics Express · 38
Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
2017 · A. Becker, V. Sichkovskyi, et al. · Applied Physics Letters · 34
High-gain wavelength-stabilized 1.55 μm InAs/InP(100) based lasers with reduced number of quantum dot active layers
2013 · V. I. Sichkovskyi, M. Waniczek, et al. · Applied Physics Letters · 32
Coherent control in a semiconductor optical amplifier operating at room temperature
2014 · A. Capua, O. Karni, et al. · Nature Communications · 22
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Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures
2008 · A. Ievtushenko, G. Lashkarev, et al. · Acta Physica Polonica A · 22
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1.5-μm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices
2021 · Sven Bauer, Vitalii Sichkovskyi, et al. · IEEE Nanotechnology Magazine · 21
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
2017 · O. Eyal, A. Willinger, et al. · Optics Express · 20
Anomalies of magnetic properties of layered crystals InSe containing Mn
2006 · G.V. Lashkarev, V.V. Slynko, et al. · Materials Science and Engineering C · 18
Diluted ferromagnetic semiconductors as spintronic materials
2007 · G. V. Lashkarev, M. V. Radchenko, et al. · Low Temperature Physics · 16
Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers
2017 · Wojciech Rudno‐Rudziński, Marcin Syperek, et al. · physica status solidi (a) · 11
Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
2017 · I. Khanonkin, A. K. Mishra, et al. · AIP Advances · 11
Temperature resistant fast InxGa1−xAs / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers
2020 · T. Finke, J. Nürnberg, et al. · Optics Express · 10
Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers
2018 · Sven Bauer, Vitalii Sichkovskyi, et al. · Journal of Crystal Growth · 10
Optimization of size uniformity and dot density of InxGa1−xAs/GaAs quantum dots for laser applications in 1 µm wavelength range
2019 · Tanja Finke, Vitalii Sichkovskyi, et al. · Journal of Crystal Growth · 9
Ramsey fringes in a room-temperature quantum-dot semiconductor optical amplifier
2018 · I. Khanonkin, A. K. Mishra, et al. · Physical review. B./Physical review. B · 9
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1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency
2016 · S. Banyoudeh, A. Abdollahinia, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 9
Nanomaterials based on CdS nanoparticles in polyethylene matrix
2009 · M. V. Radchenko, G. V. Lashkarev, et al. · Inorganic Materials · 9
Increased Modal Gain in 1.55 μm Quantum Dot Lasers Based on Improved Size Homogeneity Obtained by Comprehensive Growth Optimization
2025 · Vikram Khatri, Vitalii Sichkovskyi, et al. · ACS Photonics · 8
Comparison between InP-based quantum dot lasers with and without tunnel injection quantum well and the impact of rapid thermal annealing
2019 · Sven Bauer, Vitalii Sichkovskyi, et al. · Journal of Crystal Growth · 8
Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot – quantum well structures
2018 · Wojciech Rudno-Rudziński, Marcin Syperek, et al. · Scientific Reports · 8
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Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm
2018 · M. Syperek, J. Andrzejewski, et al. · Applied Physics Letters · 8
Ferromagnetic nanocomposites as spintronic materials with controlled magnetic structure
2013 · G. V. Lashkarev, M. V. Radchenko, et al. · Low Temperature Physics · 8
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Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates
2024 · Wojciech Rudno-Rudziński, Michał Gawełczyk, et al. · ACS Applied Materials & Interfaces · 7
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Works count: 72
Citation count: 542
H-index: 11
I10-index: 15
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