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Emanuela Calvetti

Observed names: Calvetti, Emanuela, E. Calvetti
ORCID: 0009-0009-5271-3938
Observed ORCID: 0009-0009-5271-3938
OpenAlex ID: A5045595331
Organic thin film transistors: a DC/dynamic analytical model
2005 · E. Calvetti, L. Colalongo, et al. · Solid-State Electronics · 71
A 32-KB ePCM for Real-Time Data Processing in Automotive and Smart Power Applications
2018 · Marco Pasotti, Riccardo Zurla, et al. · IEEE Journal of Solid-State Circuits · 22
Heterogeneous Embedded Neural Processing Units Utilizing PCM-Based Analog In-Memory Computing
2024 · I. Boybat, T. Boesch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
Analytical model for organic thin-film transistors operating in the subthreshold region
2005 · E. Calvetti, A. Savio, et al. · Applied Physics Letters · 17
Program circuit for a phase change memory array with 2 MB/s write throughput for embedded applications
2008 · G. De Sandre, L. Bettini, et al. · European Solid-State Circuits Conference (ESSCIRC) · 12
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation
2024 · Alessio Antolini, Francesco Zavalloni, et al. · IEEE Transactions on Electron Devices · 10
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications
2019 · M. Carissimi, R. Zurla, et al. · European Solid-State Circuits Conference (ESSCIRC) · 10
A 32KB 18ns random access time embedded PCM with enhanced program throughput for automotive and smart power applications
2017 · M. Pasotti, M. Carissimi, et al. · European Solid-State Circuits Conference (ESSCIRC) · 10
28 M Weights $\times$ TOPs $/ \mathrm{W}/\text{mm}^{2}$ PCM-Based Analog in-Memory Computing Core with 8 $512 \times 512{}$-Weight Layers in 28 nm FD-SOI CMOS
2025 · M. Pasotti, R. Zurla, et al. · 8
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications
2019 · M. Carissimi, R. Mukherjee, et al. · IEEE Solid-State Circuits Letters · 8
High-Precision Close-to-Analog Programming of PCM Cells as Devices for AiMC Edge-AI
2025 · A. Antolini, A. Lico, et al. · IEEE Journal of Solid-State Circuits · 5
An Extended Temperature Range ePCM Memory in 90-nm BCD for Smart Power Applications
2022 · M. Carissimi, C. Auricchio, et al. · European Solid-State Circuits Conference (ESSCIRC) · 5
Organic thin film transistors: an analytical model for circuit simulation
2004 · E. Calvetti, L. Colalongo, et al. · IEEE Region 10 Conference (TENCON) · 2
MEGATRON: a 28nm Analog PCM CiM/Digital System-on-Chip for Edge GenAI at 57.5 TOPS/W and 1.52 Mparam/mm${}^2$
2026 · Nadalini, Alessandro, Garofalo, Angelo, et al. · arXiv (Cornell University)
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A 28-nm FD-SOI CMOS Analog-IMC Core Based on PCM Featuring 8 512 × 512-Weight Layers and 28M Weights×TOPs/W/mm 2
2026 · Marco Pasotti, Riccardo Zurla, et al. · IEEE Journal of Solid-State Circuits
Analysis and Mitigation of Cells Programming Misalignments in PCM-based AiMC Cores
2026 · Alessio Antolini, Lorenzo Greco, et al. · IEEE VLSI Test Symposium (VTS)
A Novel A-IMC Ge-GST ePCM Cell for Edge AI Applications on 28nm FD-SOI Platform
2025 · M. Baldo, M. Allegra, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Works count: 17
Citation count: 199
H-index: 8
I10-index: 8
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