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Eleena Mohapatra
Observed names:
E Mohapatra,
E. Mohapatra,
Eleena Mohpatra,
MOHAPATRA, ELEENA
Institution:
R.V. College of Engineering
Observed institutions:
Queen's University Belfast,
Indian Institute of Technology Kharagpur,
Veer Surendra Sai University of Technology,
Siksha O Anusandhan University,
Biju Patnaik University of Technology,
R.V. College of Engineering,
Visvesvaraya Technological University
show all 7
ORCID:
0000-0002-1444-0440
Observed ORCID:
0000-0002-1444-0440
OpenAlex ID:
A5045938356
Design study of gate-all-around vertically stacked nanosheet FETs for sub-7nm nodes
2021
·
E. Mohapatra
, T. P. Dash
, et al.
·
SN Applied Sciences
·
31
Strain-engineering in nanowire field-effect transistors at 3 nm technology node
2020
·
Tara Prasanna Dash
, Suprava Dey
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
26
Strain induced variability study in Gate-All-Around vertically-stacked horizontal nanosheet transistors
2020
·
E Mohapatra
, T P Dash
, et al.
·
Physica Scripta
·
22
Vertically-Stacked Silicon Nanosheet Field Effect Transistors at 3nm Technology Nodes
2019
·
T.P. Dash
, S. Dey
, et al.
·
Devices for Integrated Circuit (DevIC)
·
20
Design and simulation of vertically-stacked nanowire transistors at 3 nm technology nodes
2019
·
S Dey
, J Jena
, et al.
·
Physica Scripta
·
16
Performance comparison of strained-SiGe and bulk-Si channel FinFETs at 7 nm technology node
2019
·
T P Dash
, S Dey
, et al.
·
Journal of Micromechanics and Microengineering
·
15
PDF
Design and optimization of stress/strain in GAA nanosheet FETs for improved FOMs at sub-7 nm nodes
2023
·
E Mohapatra
, D Jena
, et al.
·
Physica Scripta
·
14
Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance
2021
·
Sanghamitra Das
, Tara Prasanna Dash
, et al.
·
Physica Scripta
·
12
FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node
2022
·
J. Jena
, D. Jena
, et al.
·
Silicon
·
11
Stress-Induced Variability Studies in Tri-Gate FinFETs with Source/Drain Stressor at 7 nm Technology Nodes
2019
·
T. P. Dash
, J. Jena
, et al.
·
Journal of Electronic Materials
·
10
Performance and Opportunities of Gate-All-Around Vertically-Stacked Nanowire Transistors at 3nm Technology Nodes
2019
·
S. Dey
, T. P. Dash
, et al.
·
Devices for Integrated Circuit (DevIC)
·
9
Linearity improvement in graded channel AlGaN/GaN HEMTs for high-speed applications
2023
·
Devika Jena
, Sanghamitra Das
, et al.
·
Physica Scripta
·
8
PDF
Toward Ultimate Scaling: From FinFETs to Nanosheet Transistors
2020
·
T. P. Dash
, E. Mohapatra
, et al.
·
Lecture notes in networks and systems
·
8
Deformation‐induced stress/strain mapping and performance evaluation of a‐IGZO thin‐film transistors for flexible electronic applications
2020
·
Taraprasanna Dash
, Eleena Mohapatra
, et al.
·
Journal of the Society for Information Display
·
8
Performance Analysis of Si-Channel Nanosheet FETs with Strained SiGe Source/Drain Stressors
2020
·
E. Mohapatra
, T. P. Dash
, et al.
·
Lecture notes in electrical engineering
·
8
A Fully-Customized RTL to GDS Design and Verification of Low-Power Cache Memory
2024
·
Eleena Mohapatra
, Sudeep Kumar Shetty
, et al.
·
IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
·
6
Work-Function Variability impact on the performance of Vertically Stacked GAA FETs for sub-7nm Technology Node
2022
·
Eleena Mohapatra
, Devika Jena
, et al.
·
IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
·
6
A Simulation Study of 2-D Electron Gas in GaN HEMT for High- Speed Applications
2021
·
Devika Jena
, E. Mohapatra
, et al.
·
Devices for Integrated Circuit (DevIC)
·
6
Performance Analysis of FinFET based inverter at 7nm Technology Node Using TCAD Simulation
2021
·
J. Jena
, S. Das
, et al.
·
Devices for Integrated Circuit (DevIC)
·
5
Stress-Engineered AlGaN/GaN High Electron Mobility Transistors Design
2021
·
S. Das
, E. Mohapatra
, et al.
·
Devices for Integrated Circuit (DevIC)
·
5
Performance Analysis of Sub-10nm Vertically Stacked Gate-All-Around FETs
2020
·
E. Mohapatra
, T. P. Dash
, et al.
·
IEEE VLSI Device Circuit and System (VLSI DCS)
·
4
Fin Shape Dependence of Electrostatics and Variability in FinFETs
2019
·
J. Jena
, T. P. Dash
, et al.
·
Journal of Electronic Materials
·
4
Role of Stress/Strain Mapping in Advanced CMOS Process Technology Nodes
2019
·
T. P. Dash
, J. Jena
, et al.
·
Devices for Integrated Circuit (DevIC)
·
4
Investigation of Work Function Variation on the Electrical Performance of sub-7nm GAA FETs
2021
·
E. Mohapatra
, T. P. Dash
, et al.
·
Devices for Integrated Circuit (DevIC)
·
3
Metal Grain Granularity Induced Variability in Gate-All-Around Si-Nanowire Transistors at 1nm Technology Node
2019
·
T. P. Dash
, S. Dey
, et al.
·
Devices for Integrated Circuit (DevIC)
·
3
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Works count:
64
Citation count:
296
H-index:
10
I10-index:
10
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