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Kai Daniel Hanke

Observed names: Hanke, Kai Daniel, K.D. Hanke
Observed institution: Technische Universität Ilmenau
ORCID: 0000-0001-5980-2858
Observed ORCID: 0000-0001-5980-2858
OpenAlex ID: A5046015663
Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces
2025 · Sahar Shekarabi, Mohammad Amin Zare Pour, et al. · ACS Applied Materials & Interfaces · 11
Band energy diagrams of n-GaInP/n-AlInP(100) surfaces and heterointerfaces studied by X-ray photoelectron spectroscopy
2022 · Mohammad Amin Zare Pour, Oleksandr Romanyuk, et al. · Surfaces and Interfaces · 11
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Water Vapor Interaction with Well-Ordered GaInP(100) Surfaces
2024 · David Ostheimer, Christian Dreßler, et al. · The Journal of Physical Chemistry C · 7
Surface structure of MOVPE-prepared As-modified Si(100) substrates
2024 · Chris Yannic Bohlemann, Aaron Flötotto, et al. · Applied Surface Science · 6
Controlling catalyst agglomeration in high-density unordered III-V nanowire growth using Au colloid solutions
2026 · Bohlemann, Chris Yannic, Manoharan, Pavithira, et al. · arXiv (Cornell University)
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Band Alignment and Composition of the Buried TiO 2 /GaInP Interface
2026 · David Ostheimer, Sahar Shekarabi, et al. · Advanced Materials Interfaces
On the origin of bulk-related anisotropies in surface optical spectra
2026 · Max Großmann, Kai Daniel Hanke, et al. · Communications Materials
Atomic surface structure of antiphase domains in heteroepitaxial GaP films grown on arsenic-terminated Si(100)
2025 · P. Kleinschmidt, D. Bratek, et al. · Journal of Crystal Growth
Surface Structure of Movpe-Prepared As-Modified Si(100) Substrates
2024 · T. Hannappel, Chris Yannic Bohlemann, et al. · SSRN Electronic Journal
Optical In Situ Studies of Ge(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactors for Low-Defect III-P Growth
2023 · Manali Nandy, Agnieszka Paszuk, et al. · ACS Applied Electronic Materials
Works count: 10
Citation count: 35
H-index: 4
I10-index: 2
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