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Walter Pflanzl
Observed names:
W. Pflanzl,
W.C. Pflanzl
Institution:
AMS (Austria)
Observed institution:
AMS (Austria)
OpenAlex ID:
A5046621059
Poly resistor modeling over a wide range of geometries and their different temperature and voltage behaviour for a HV CMOS process
2008
·
Walter Pflanzl
, E. Seebacher
·
International Conference Mixed Design of Integrated Circuits and Systems
·
11
Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs
2012
·
Nikolaos Mavredakis
, Matthias Bucher
, et al.
·
IEEE Transactions on Electron Devices
·
10
High-Voltage MOSFET Modeling
2010
·
E. Seebacher
, K. Molnar
, et al.
·
Springer eBooks
·
6
Simple 1/f noise parameter extraction method for high-voltage MOSFETs
2014
·
Konstantinos Fellas
, Nikolaos Mavredakis
, et al.
·
IEEE International Conference on Microelectronics (MIEL)
·
4
Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET
2017
·
E.G. Ioannidis
, K. Rohracher
, et al.
·
Solid-State Electronics
·
3
Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET
2016
·
E.G. Ioannidis
, W.C. Pflanzl
, et al.
·
Solid-State Electronics
·
3
Methodology for 1/f noise parameter extraction for high-voltage MOSFETs
2014
·
Nikolaos Mavredakis
, Walter Pflanzl
, et al.
·
Solid-State Electronics
·
3
Evaluation of Electromagnetic Coupling Between Microelectronic Device Structures Using Computational Electrodynamics
2010
·
Wim Schoenmaker
, Peter Meuris
, et al.
·
Mathematics in industry
·
3
1/f noise corner modeling
2006
·
W.C. Pflanzl
, E. Seebacher
, et al.
·
International Conference Mixed Design of Integrated Circuits and Systems
·
3
An extended two-port method for the determination of the base and emitter resistance
2005
·
Z. Huszka
, E. Seebacher
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
3
Domain Decomposition via Electromagnetic Hooks for the Modeling of Complete RF blocks
2008
·
J. Niehof
, H.H.J.M. Janssen
, et al.
·
IEEE Workshop on Signal Propagation on Interconnects (SPI)
·
2
Joint Extraction of the Base and Collector Resistances with the Base-Collector Capacitance Split of HBT/BJT Transistors
2006
·
Z. Huszka
, E. Seebacher
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
2
Analysis of drain bias dependence of 1/f noise in HV-MOSFETs
2015
·
Nikolaos Mavredakis
, Walter Pflanzl
, et al.
·
International Conference on Noise and Fluctuations
·
1
Investigation of Substrate Noise Coupling and Isolation Characteristics for a 0.35UM HV CMOS Technology
2007
·
W.C. Pflanzl
, E. Seebacher
·
International Conference Mixed Design of Integrated Circuits and Systems
·
1
Analog Compact Modeling for a 20-120V HV CMOS Technology
2006
·
E. Seebacher
, Werner Posch
, et al.
·
TechConnect Briefs
·
1
Evaluation of the robustness of the defect-centric model for defect parameter extraction from RTN and BTI analysis using Comphy
2025
·
Martin E.M. Loesener
, Tobias Zinsler
, et al.
·
Microelectronic Engineering
Evaluation of the Robustness of the Defect-Centric Model for Defect Parameter Extraction from RTN Analysis
2024
·
Martin E. M. Loesener
, Tobias Zinsler
, et al.
·
Austrochip Workshop on Microelectronics (Austrochip)
Low TID Effects on MOS Transistors
2018
·
Varvara Bezhenova
, Alicja Michalowska-Forsyth
, et al.
·
European Conference on Radiation and Its Effects on Components and Systems
1/f noise temperature behaviour of poly resistors
2012
·
Walter Pflanzl
, E. Seebacher
·
International Conference Mixed Design of Integrated Circuits and Systems
DomainDecomposition viaElectromagnetic HooksfortheModeling ofComplete RIFblocks
2008
·
Jamie Niehof
, H. H. J. M. Janssen
, et al.
Simulation and Measurement of Interconnects and On-Chip Passives: Gauge Fields and Ghosts as Numerical Tools
2006
·
Wim Schoenmaker
, Peter Meuris
, et al.
·
Mathematics in industry
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Works count:
21
Citation count:
56
H-index:
4
I10-index:
2
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