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Irina V. Yarotskaya

Observed names: I V Yarotskaya, I. V. Yarotskaya, I.V. Yarotskaya, I. V. Yarotskaya, Irina Yarotskaya, Yarotskaya I. V., И. В. Яроцкая, И. Яроцкая, И.В. Яроцкая
Observed institutions: Russian Academy of Sciences, ITMO University, Moscow State University of Fine Chemical Technologies, Polyus Research Institute of M.F.Stelmakh (Russia), Prokhorov General Physics Institute, Ioffe Institute
OpenAlex ID: A5046933968
Preparation of nanopowdered M1−x R x F2+x (M = Ca, Sr, Ba; R = Ce, Nd, Er, Yb) Solid Solutions
2007 · S. V. Kuznetsov, I. V. Yarotskaya, et al. · Russian Journal of Inorganic Chemistry · 32
Soft chemical synthesis of NaYF4 nanopowders
2008 · P. P. Fedorov, S. V. Kuznetsov, et al. · Russian Journal of Inorganic Chemistry · 30
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
2019 · Maxim A. Ladugin, Irina V. Yarotskaya, et al. · Crystals · 25
High-Power Quantum Cascade Lasers Emitting at 8 μm: Technology and Analysis
2022 · Evgeniia Cherotchenko, Vladislav Dudelev, et al. · Nanomaterials · 15
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AlGaAs/GaAs laser diode bars (λ = 808 nm) with improved thermal stability
2013 · A A Marmalyuk, M A Ladugin, et al. · Quantum Electronics · 14
Laser diode bars based on strain-compensated AlGaPAs/GaAs heterostructures
2012 · Aleksandr A Marmalyuk, M A Ladugin, et al. · Quantum Electronics · 12
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Synthesis of scandium orthoborate powders
2006 · E. A. Tkachenko, P. P. Fedorov, et al. · Inorganic Materials · 10
Quantum cascade lasers for the 8-μm spectral range: technology, design, and analysis
2023 · Vladislav V. Dudelev, Evgeniia D. Cherotchenko, et al. · Physics-Uspekhi · 7
Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures
2011 · A. A. Marmalyuk, E. I. Davydova, et al. · Semiconductors · 7
Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides
2021 · N.A. Volkov, V.N. Svetogorov, et al. · Quantum Electronics · 6
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Semiconductor AlGaInAs/InP lasers (λ = 1450 – 1500 nm) with a strongly asymmetric waveguide
2021 · N.A. Volkov, A.Yu. Andreev, et al. · Quantum Electronics · 6
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High-power cw laser bars of the 750 – 790-nm wavelength range
2013 · N S Degtyareva, S A Kondakov, et al. · Quantum Electronics · 6
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Heterostructures of Quantum-Cascade Lasers Based on Composite Active Regions
2023 · A. V. Babichev, A. G. Gladyshev, et al. · Bulletin of the Russian Academy of Sciences Physics · 5
A model for calculating the composition of GaAs x P1–x solid solutions under metalorganic vapor phase epitaxy conditions
2017 · A. D. Maksimov, V. Yu. Eistrikh-Geller, et al. · Inorganic Materials · 4
808-nm laser diode bars based on epitaxially stacked double heterostructures
2010 · Evgeniya I Davydova, V P Konyaev, et al. · Quantum Electronics · 4
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The influence of waveguide doping on the output characteristics of AlGaAs/GaAs lasers
2020 · K.Yu. Telegin, M.A. Ladugin, et al. · Quantum Electronics · 3
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Dual-wavelength laser diodes based on epitaxially stacked heterostructures
2010 · Evgeniya I Davydova, V P Konyaev, et al. · Quantum Electronics · 3
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Quantum cascade lasers for the 8-μm spectral range: technology, design, and analysis
2023 · Vladislav V. Dudelev, Evgeniia D. Cherotchenko, et al. · Uspekhi Fizicheskih Nauk · 2
Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Al x Ga1–x As/Al y Ga1–y As heterostructure with optical and electron beam pumping
2022 · M.R. Butaev, Ya.K. Skasyrsky, et al. · Quantum Electronics · 2
Improvement of the current – voltage performance of broadened asymmetric waveguide InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 940 – 980 nm)
2022 · N.A. Volkov, K.Yu. Telegin, et al. · Quantum Electronics · 2
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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics
2021 · N.A. Volkov, T.A. Bagaev, et al. · Quantum Electronics · 2
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Гетероструктуры квантово-каскадных лазеров с неселективным заращиванием методом газофазной эпитаксии
2021 · А.В. Бабичев, А.Г. Гладышев, et al. · Письма в журнал технической физики · 2
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Laser emitters (λ = 808 nm) based on AlGaAs/GaAs heterostructures
2014 · A. A. Marmalyuk, A. Yu. Andreev, et al. · Semiconductors · 2
InP/InGaAs-Based Avalanche Photodiodes for Single-Photon Detectors in the 1550 nm Spectral Range
2025 · P. E. Kopytov, S. A. Blokhin, et al. · Bulletin of the Lebedev Physics Institute · 1
Scanning spreading resistance microscopy for p – n junction and carrier distribution analysis in InGaAs/AlGaAs quantum well laser heterostructure
2025 · D. E. Sviridov, M. R. Butaev, et al. · Journal of Applied Physics · 1
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Works count: 60
Citation count: 209
H-index: 7
I10-index: 7
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