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Takuya Kokawa

Observed name: Takuya KOKAWA
ORCID: 0009-0002-9966-6947
Observed ORCID: 0009-0002-9966-6947
OpenAlex ID: A5046950499
Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage
2010 · Hiroshi Kambayashi, Yoshihiro Satoh, et al. · Solid-State Electronics · 147
Liquid-phase sensors using open-gate AlGaN∕GaN high electron mobility transistor structure
2006 · Takuya Kokawa, Taketomo Sato, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 60
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Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate
2011 · Nariaki Ikeda, Ryosuke Tamura, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 40
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique
2010 · Hiroshi Kambayashi, Yoshihiro Satoh, et al. · Solid-State Electronics · 38
High-power AlGaN/GaN MIS-HFETs with field-plates on Si substrates
2009 · Nariaki Ikeda, Shusuke Kaya, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 35
Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation
2009 · Hiroshi Kambayashi, Yoshihiro Satoh, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 21
High-power AlGaN/GaN HFETs on Si substrates
2010 · Nariaki Ikeda, Shusuke Kaya, et al. · International Power Electronics Conference (IPEC) · 11
High power AlGaN/GaN HFETs on 4 inch Si substrates
2009 · Nariaki Ikeda, Syuusuke Kaya, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8
(Invited) High Power Normally-Off GaN MOSFET
2011 · Hiroshi Kambayashi, Yoshihiro Satoh, et al. · ECS Transactions · 4
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High Power and Low Power Consumption Raman Pump Lasers With Electric Field Control Layer for Wide-Bands Raman Amplification
2024 · Junji Yoshida, Naoya Hojo, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 3
Vb/Ron improvement and current collapse suppression for high power AlGaN/GaN HFETs on Si substrates
2011 · Nariaki Ikeda, Shusuke Kaya, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 1
High Power GaN Field Effect Transistors on Si Substrates
2011 · Nariaki IKEDA, Syuusuke KAYA, et al. · Journal of the Vacuum Society of Japan · 1
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3.7W Ultra Low Power Consumption at a Half-Watt fiber output of 14xx-nm Raman Pump Laser
2024 · Junji Yoshida, Keiji Sakaguchi, et al. · Opto-Electronics and Communications Conference (OECC)
1W fiber output operation at 35 degree C of FBG-laser with a GaInAsP laser chip with electric field control layer for fiber Raman amplifier
2024 · Junji Yoshida, Takuya Kokawa, et al. · High-Power Diode Laser Technology
Dynamic characterization of output power fluctuations in FBG stabilized 14xx-nm GaInAsP/InP laser modules
2016 · Takuya Kokawa, Junji Yoshida, et al. · IEEE International Semiconductor Laser Conference (ISLC)
High Power Normally-Off GaN MOSFET on Si Substrate
2011 · Hiroshi Kambayashi, Yoshihiro Satoh, et al. · ECS Meeting Abstracts
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Performance of open-gate AlGaN/GaN HFET in various kinds of liquids
2007 · Takuya Kokawa, Taketomo Sato, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 17
Citation count: 369
H-index: 8
I10-index: 7
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