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Peter Wennekers
Observed name:
P. Wennekers
Observed institutions:
Motorola (United States),
Fraunhofer Institute for Applied Solid State Physics,
Motorola (Germany),
Freescale Semiconductor (Germany),
Ruhr University Bochum
OpenAlex ID:
A5047046755
Erbium doping of molecular beam epitaxial GaAs
1987
·
R. S. Smith
, H. D. Müller
, et al.
·
Applied Physics Letters
·
73
Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy
1988
·
H. J. Richter
, R. S. Smith
, et al.
·
Applied Physics Letters
·
56
Structural, electrical and optical characterization of singlecrystal ErAs layers grown on GaAs by MBE
1990
·
J. D. Ralston
, H. Ennen
, et al.
·
Journal of Electronic Materials
·
29
Novel nanostructure architectures
2004
·
O.G. Schmidt
, A. Rastelli
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
23
O/e-MCM packaging with new, patternable dielectric and optical materials
1998
·
M.E. Robertsson
, O.-J. Hagel
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
23
A contribution to the current gain temperature dependence of bipolar transistors
1978
·
H.-M. Rein
, H. v. Rohr
, et al.
·
Solid-State Electronics
·
23
Fully Integrated SiGe-BiCMOS Receiver(RX) and Transmitter(TX) Chips for 76.5 GHz FMCW Automotive Radar Systems Including Demonstrator Board Design
2007
·
R. Reuter
, H. Li
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
18
SiGe 77GHz Automotive Radar Technology
2007
·
W.M. Huang
, J. P. John
, et al.
·
IEEE International Symposium on Circuits and Systems proceedings
·
15
Spectroscopic techniques for characterization of high-mobility strained-Si CMOS
2004
·
Jens Schmidt
, Günther Vogg
, et al.
·
Materials Science in Semiconductor Processing
·
14
An integrated SiGe transmitter circuit for 24 GHz radar sensors
2003
·
P. Wennekers
, A. Ghazionour
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
9
Understanding the cause of IV kink in GaAs MESFETs with two-dimensional numerical simulations
2002
·
M.R. Wilson
, I. Zdebel
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
9
10-20 Gbit/s GaAs/AlGaAs HEMT ICs for high speed data links
1992
·
M. Berroth
, V. Hurm
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
8
A Cascade 3-1-1 Multibit Σ∆ A/D Modulator with Reduced Sensitivity to Non-Idealities
2005
·
Yi Yin
, H. Klar
, et al.
·
IEEE International Symposium on Circuits and Systems proceedings
·
7
SiGe technology requirements for millimeter-wave applications
2004
·
P. Wennekers
, R. Reuter
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
7
An Integrated SiGe-BiCMOS Low Noise Transmitter Chip with a Frequency Divider Chain for 77 GHz Applications
2006
·
Akbar Ghazinour
, Peter Wennekers
, et al.
·
European Microwave Integrated Circuits Conference
·
6
The Emergence of SiGe:C HBT Technology for RF Applications
2003
·
V. Ilderem
, Selin Tolunay Wipf
, et al.
·
4
10 GB/s bit-synchronizer circuit with automatic timing alignment by clock phase shifting using quantum-well AlGaAs/GaAs/AlGaAs
1992
·
P. Wennekers
, U. Novotny
, et al.
·
IEEE Journal of Solid-State Circuits
·
4
Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology
1992
·
P. Wennekers
, R. Bosch
, et al.
·
Electronics Letters
·
3
P-contact MESFETs for high voltage mixed-mode RF-applications
2002
·
P. Wennekers
, P. Zdebel
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
2
10 Gbit/s bit-synchronizer with automatic retiming clock alignment using quantum well AlGaAs/GaAs/AlGaAs technology
1991
·
P. Wennekers
, U. Nowotny
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
2
A novel broadband cascade sigma-delta analog-to-digital converter.
2004
·
Yi Yin
, H. Klär
, et al.
·
Circuits, Signals, and Systems
·
1
10 Gbit/s low-power bit synchroniser with automatic retiming phase alignment
1991
·
P. Wennekers
, U. Nowotny
, et al.
·
Electronics Letters
·
1
14 GHz low-power highly sensitive static frequency divider using quantum well AlGaAs/GaAs/AlGaAs FET technology
1991
·
P. Wennekers
, A. Huelsmann
, et al.
·
Electronics Letters
·
1
実証機の基板設計を含む76.5GHz FMCWの自動車レーダーシステムのための完全集積化SiGe-BiCMOS受信機(RX)と送信機(TX)チップ
2007
·
Ralf Reuter
, H Li
, et al.
·
IEEE MTT-S International Microwave Symposium digest
Structural, Electrical and Optical Characterization of Crystal ErAs Layers Grown on GaAs by MBE Single-
2007
·
J.D. Ralston
, H. Ennen
, et al.
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Works count:
34
Citation count:
338
H-index:
9
I10-index:
9
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