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Wenbo Zhan
Observed name:
W. Zhan
Institution:
Everbright International (China)
Observed institutions:
Everbright International (China),
Institute for Nano Quantum Information Electronics, The University of Tokyo,
The Ohio State University,
The University of Tokyo
ORCID:
0000-0002-2983-8881
Observed ORCID:
0000-0002-2983-8881
OpenAlex ID:
A5047077842
Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
2017
·
Yunqiu Kelly Luo
, Jinsong Xu
, et al.
·
Nano Letters
·
227
PDF
Opto-Valleytronic Spin Injection in Monolayer MoS 2 /Few-Layer Graphene Hybrid Spin Valves
2018
·
Yunqiu Kelly Luo
, Jinsong Xu
, et al.
·
Bulletin of the American Physical Society
·
16
All III‐arsenide low threshold InAs quantum dot lasers on InP(001)
2023
·
Jinkwan Kwoen
, Natália Morais
, et al.
·
Electronics Letters
·
13
PDF
Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix
2019
·
Wenbo Zhan
, Satomi Ishida
, et al.
·
physica status solidi (b)
·
11
E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer
2021
·
J. Kwoen
, W. Zhan
, et al.
·
Electronics Letters
·
9
PDF
Monolithic 960/1000 nm Bicolor Semiconductor Disk Laser Delivers a Brightness of Over 300 MW/cm2sr
2025
·
Zhicheng Zhang
, Yao Xiao
, et al.
·
ACS Photonics
·
5
Over 1.65 GW cm−2 sr−1 brightness 590 nm yellow second-harmonic generation in MOCVD-grown high-strain InGaAs/GaAs quantum well VECSEL
2026
·
Zhicheng Zhang
, Wenbo Zhan
, et al.
·
Light Science & Applications
·
2
PDF
E‐Band InAs/GaAs Trilayer Quantum Dot Lasers
2021
·
Wenbo Zhan
, Jinkwan Kwoen
, et al.
·
physica status solidi (a)
·
1
Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane
2013
·
Wenbo Zhan
, Yourui Huangfu
, et al.
·
Chinese Optics Letters
·
1
High-Power Continuous-Wave Room Temperature Quantum Cascade Laser at 4.6 μm with Record 8.2W Output Power
2026
·
Ming Lyu
, Junpu wang
, et al.
·
Photonics Research
High peak power mini-array quantum cascade lasers operating in pulsed mode at room temperature
2026
·
Yi Wang
, Yuhang Zhang
, et al.
·
Optics Continuum
All III-arsenide 1.6 μm-band InAs quantum dot lasers on InP(001) with a low threshold current density
2022
·
Jinkwan Kwoen
, Natalia Morais
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Growth of highly-uniform InAs quantum dots on metamorphic GaInAs/GaAs in 1.5-µm wavelength region
2021
·
Katsuyuki Watanabe
, Jinkwan Kwoen
, et al.
·
The Japan Society of Applied Physics
Fabrication and characterization of InAs/GaAs tri-layer quantum dot lasers
2021
·
Wenbo Zhan
, Jinkwan Kwoen
, et al.
·
The Japan Society of Applied Physics
1.6 μm-band Emission from Metamorphic InAs Quantum Dots on GaAs Substrates
2019
·
Wenbo Zhan
, Satomi Ishida
, et al.
·
The Japan Society of Applied Physics
InAs/GaAs Trilayer Quantum Dots with Long-wavelength Emission
2019
·
Wenbo Zhan
, Jinkwan Kwoen
, et al.
·
The Japan Society of Applied Physics
$1.6 \ \mu \mathbf{m}$ Emission from InAs QDs in Metamorphic InGaAs Matrix
2019
·
Wenbo Zhan
, Satomi Ishida
, et al.
·
Compound Semiconductor Week (CSW)
MBE growth of 1.5-µm-band metamorphic InAs/GaInAs/GaAs quantum dots
2019
·
Katsuyuki Watanabe
, Wenbo Zhan
, et al.
·
The Japan Society of Applied Physics
Growth of InAs/GaAs Bilayer Quantum Dots with Long-wavelength Emission
2019
·
Wenbo Zhan
, Jinkwan Kwoen
, et al.
·
The Japan Society of Applied Physics
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Works count:
20
Citation count:
288
H-index:
5
I10-index:
4
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