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M. Trempa

Observed names: M Trempa, Matthias Trempa, Trempa Matthias, Trempa, M., Trempa, Matthias
ORCID: 0000-0002-2062-9290
Observed ORCID: 0000-0002-2062-9290
OpenAlex ID: A5047598172
Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals
2012 · M. Trempa, C. Reimann, et al. · Journal of Crystal Growth · 98
Modeling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters
2010 · C. Reimann, M. Trempa, et al. · Journal of Crystal Growth · 78
The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon
2010 · M. Trempa, C. Reimann, et al. · Journal of Crystal Growth · 77
Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots
2014 · M. Trempa, C. Reimann, et al. · Journal of Crystal Growth · 69
About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
2010 · C. Reimann, M. Trempa, et al. · Journal of Crystal Growth · 58
Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale
2014 · Toni Lehmann, Matthias Trempa, et al. · Acta Materialia · 42
Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi‐mono‐crystalline silicon ingots
2014 · Matthias Trempa, Christian Reimann, et al. · Crystal Research and Technology · 41
Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications
2019 · Jochen Friedrich, Thomas Jung, et al. · Journal of Crystal Growth · 39
Influence of different seed materials on multi-crystalline silicon ingot properties
2015 · C. Reimann, M. Trempa, et al. · Journal of Crystal Growth · 29
Investigation of gas bubble growth in fused silica crucibles for silicon Czochralski crystal growth
2019 · Antje Hirsch, Matthias Trempa, et al. · Journal of Crystal Growth · 27
Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots
2016 · M. Trempa, I. Kupka, et al. · Journal of Crystal Growth · 27
Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV application
2020 · F. Sturm, M. Trempa, et al. · Journal of Crystal Growth · 26
Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon
2017 · Daniel Oriwol, Matthias Trempa, et al. · Journal of Crystal Growth · 26
Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals
2021 · Antje Hirsch, Manuel Schulze, et al. · Journal of Crystal Growth · 23
Impact of different SiO2 diffusion barrier layers on lifetime distribution in multi-crystalline silicon ingots
2019 · M. Trempa, F. Sturm, et al. · Journal of Crystal Growth · 23
Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingots
2015 · M. Trempa, C. Reimann, et al. · Journal of Crystal Growth · 23
Microstructure and Mechanical Properties of Hypereutectic Al-High Si Alloys up to 70 wt.% Si-Content Produced from Pre-Alloyed and Blended Powder via Laser Powder Bed Fusion
2023 · Jan Henning Risse, Matthias Trempa, et al. · Materials · 22
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Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots
2017 · I. Kupka, T. Lehmann, et al. · Journal of Crystal Growth · 22
Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots
2016 · M. Trempa, M. Beier, et al. · Journal of Crystal Growth · 21
Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals
2022 · F. Sturm, M. Trempa, et al. · Journal of Crystal Growth · 12
Metal contamination of silicon from the furnace atmosphere after crystallization
2021 · C. Kranert, M. Trempa, et al. · Journal of Crystal Growth · 10
Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots
2021 · S. Schwanke, M. Trempa, et al. · Journal of Crystal Growth · 9
Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots
2019 · M. Trempa, C. Kranert, et al. · Journal of Crystal Growth · 8
Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles
2019 · S. Schwanke, M. Trempa, et al. · Journal of Crystal Growth · 7
Grain Boundaries in Multicrystalline Silicon
2018 · Matthias Trempa, Georg Müller, et al. · Springer eBooks · 7
Works count: 54
Citation count: 855
H-index: 19
I10-index: 21
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