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B. Grolleau

Effects of Roughness, Fibronectin and Vitronectin on Attachment, Spreading, and Proliferation of Human Osteoblast-Like Cells (Saos-2) on Titanium Surfaces
1999 · I. Degasne, M. F. Baslé, et al. · Calcified Tissue International · 328
Mass spectrometry of a silane glow discharge during plasma deposition of a-Si: H films
1980 · G. Turban, Y. Catherine, et al. · Thin Solid Films · 144
Plasma diagnostics of a SF6radiofrequency discharge used for the etching of silicon
1986 · A Picard, G Turban, et al. · Journal of Physics D Applied Physics · 107
Diagnostics in helicon plasmas for deposition
1997 · A Granier, F Nicolazo, et al. · Plasma Sources Science and Technology · 98
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Reaction mechanisms of the radio frequency glow discharged deposition process in silane-helium
1979 · G. Turban, Y. Catherine, et al. · Thin Solid Films · 94
Ion and radical reactions in the silane glow discharge deposition of a-Si:H films
1982 · G. Turban, Y. Catherine, et al. · Plasma Chemistry and Plasma Processing · 85
A study of the silane glow discharge deposition by isotopic labelling
1981 · G. Turban, Y. Catherine, et al. · Thin Solid Films · 73
Analyse XPS des surfaces de Si et SiO2 exposées aux plasmas de CHF3 et CHF3—C2F6. Polymérisation et gravure
1989 · Ch. Cardinaud, A. Rhounna, et al. · Revue de Physique Appliquée · 49
Reaction mechanisms in plasma deposition of SixC1-x:H films
1981 · Y. Catherine, G. Turban, et al. · Thin Solid Films · 49
Contamination of Silicon Surfaces Exposed to CHF 3 Plasmas: An XPS Study of the Film and the Film‐Surface Interface
1988 · C. Cardinaud, A. Rhounna, et al. · Journal of The Electrochemical Society · 47
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A mass spectrometric diagnostic of C2F6 and CHF 3 plasmas during etching of SiO2 and Si
1985 · G. Turban, B. Grolleau, et al. · Revue de Physique Appliquée · 40
Study of DLC/silicon interfaces by XPS and in-situ ellipsometry
1993 · N. Fourches, G. Turban, et al. · Applied Surface Science · 33
Study of oxygen/tetraethoxysilane plasmas in a helicon reactor using optical emission spectroscopy and mass spectrometry
2000 · K Aumaille, A Granier, et al. · Plasma Sources Science and Technology · 30
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Study of oxygen/TEOS plasmas and thin SiOx films obtained in an helicon diffusion reactor
1998 · F. Nicolazo, A. Goullet, et al. · Surface and Coatings Technology · 30
An XPS study of the SF6 reactive ion beam etching of silicon at low temperatures
1999 · P.Y. Tessier, T. Chevolleau, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 23
Mass spectrometric study of tetraethoxysilane and tetraethoxysilane–oxygen plasmas in a diode type radio-frequency reactor
1992 · C. Charles, P. Garcia, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 22
Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis
1998 · Y. Feurprier, Ch. Cardinaud, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 20
Silicon damage and residue overlayer caused by rie and ribe processes with CHF3
1989 · Ch. Cardinaud, G. Turban, et al. · Applied Surface Science · 19
Etch product identification during - RIE of InP using mass spectrometry
1997 · Y Feurprier, Ch Cardinaud, et al. · Plasma Sources Science and Technology · 18
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Energy Distribution of Ions in Plasma Etching Reactors
1986 · P. Briaud, G. Turban, et al. · MRS Proceedings · 14
Neutral and ion chemistry in a C2H4-SiH4 discharge
1982 · Y. Catherine, G. Turban, et al. · Plasma Chemistry and Plasma Processing · 13
Study of the characteristics of the ion beam extracted from an rf discharge in hydrogen under conditions of resonance
1974 · B. Grolleau · Journal of Applied Physics · 8
Mass spectrometric investigation of the positive ions formed in low-pressure oxygen/tetraethoxysilane and argon/tetraethoxysilane plasmas
2001 · K. Aumaille, A. Granier, et al. · Journal of Applied Physics · 6
Neon ion beam-induced surface reactions of SF6 adsorbed molecules with silicon at low temperature
1996 · J. Royer, P. Y. Tessier, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 6
Interaction of 100 eV and 5 keV electrons with a condensed layer of SF6 on silicon at 100 K
1992 · J. Royer, G. Turban, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2
Works count: 37
Citation count: 1,363
H-index: 18
I10-index: 21
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