Get started
Author

Konstantin A. Tsarik

Observed names: K. A. Tsarik, K. Tsarik, K.A. Tsarik, Konstantin Tsarik, Tsarik, K. A., Tsarik, Konstantin, К. А. Царик, К.А. Царик, Царик Константин Анатольевич
ORCID: 0000-0002-8218-7774
Observed ORCID: 0000-0002-8218-7774
OpenAlex ID: A5047659893
Graphene-based dual-mode electrochemical-FET aptasensor for rapid zeptomolar detection of CEA
2025 · Anastasiia Kudriavtseva, Alexey V. Orlov, et al. · Microchimica Acta · 6
A distribution of Ga+ ions in a silicon substrate for nano-dimensional masking
2014 · I. I. Bobrinetskii, V. K. Nevolin, et al. · Russian Microelectronics · 6
Investigation of the Influence of the Buffer Layer Design in a GaN HEMT Transistor on the Breakdown Characteristics
2023 · D. M. Kurbanbaeva, A. V. Lashkov, et al. · Russian Microelectronics · 5
Coherent Phonon-Mode Excitation in Submicron Single-Crystal Diamond Films with a Graphitized Layer Built-In
2017 · M. V. Tareeva, V. A. Dravin, et al. · Journal of Russian Laser Research · 5
Systematic features of the formation of semiconductor nanostructures using a focused ion beam
2012 · A. V. Bessonova, V. K. Nevolin, et al. · Semiconductors · 5
Silicon-based nanostructures formed by plasma etching through a mask formed by a focused beam of Ga+ ions
2015 · I. I. Bobrinetskii, A. V. Volkova, et al. · Russian Microelectronics · 3
Focused-Ion-Beam Exposure of an Ultrathin Electron-Beam Resist for the Formation of Nanoscale Field-Effect Transistor Contacts
2022 · K. A. Tsarik · Semiconductors · 2
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes
2017 · A. V. Emelianov, A. V. Romashkin, et al. · Semiconductors · 2
Formation of nanosized elements of microwave transistor gates by ion beam lithography
2016 · K. K. Lavrentyev, V. K. Nevolin, et al. · Russian Microelectronics · 2
AlN sensor based on surface acoustic wave with signal amplification by AlN/GaN HEMT
2015 · Konstantin A. Tsarik, Vladimir K. Nevolin, et al. · International Conference on Control, Instrumentation, Communication and Computational Technologies · 2
MBE-grown nanoheterostructures with increased electron mobility
2012 · A. N. Alekseev, S. I. Petrov, et al. · Russian Microelectronics · 2
Research of Magnetron Sputtering Thick TiN Film Production for Power GaN Electronics
2024 · Konstantin Nikitin, Daniil Tuzhilin, et al. · IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering · 1
ОСОБЕННОСТИ КОНСТРУКЦИИ ГЕТЕРОСТРУКТУР ПРИ ПОСТРОЕНИИ GaN НОРМАЛЬНО ЗАКРЫТЫХ ТРАНЗИСТОРОВ ДЛЯ СИЛОВЫХ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ
2023 · К.А. Царик, О.Б. Чуканова, et al. · Nanoindustry Russia · 1
ОСОБЕННОСТИ ФОРМИРОВАНИЯ ТОНКИХ СЛОЕВ AlN МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИЕЙ НА ТЕМПЛЕЙТАХ 3С-SiC/Si(111) С ON-AXIS И 4° OFF-AXIS РАЗОРИЕНТАЦИЕЙ
2020 · А. В. Бабаев, В. К. Неволин, et al. · Известия Российской академии наук Механика твердого тела · 1
Structural and morphological properties of Ga(Al)N grown by MBE on 3C-SiC/Si (111) templates with off-axis and on-axis substrate orientation
2019 · Konstantin Tsarik, Sergey D. Fedotov, et al. · International Conference on Micro- and Nano-Electronics (ICMNE) · 1
Raman scattering in the submicrometer diamond membrane formed by the lift-off technique
2017 · M. V. Tareeva, V. A. Antonov, et al. · Bulletin of the Lebedev Physics Institute · 1
Высокая подвижность носителей заряда в молекулярных каналах полианилина в нанозазорах между углеродными нанотрубками
2017 · А.В. Емельянов, A.В. Ромашкин, et al. · Физика и техника полупроводников · 1
PDF
Deposition of polymers on structures with nano-gaps fabricated between carbon nanotubes by focused ion beam etching
2016 · A. V. Romashkin, A. V. Emelianov, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Formation and atomic force spectroscopy of AlGaN/GaN nanoheterostructures
2010 · K. A. Tsarik, V. K. Nevolin · Semiconductors · 1
Разработка Конструкции Транзисторных Гетероструктур На Основе Нитрида Галлия На Кремниевых Подложках Для Создания Высоковольтных Транзисторов
2026 · К.А. Царик · Международная Звенигородская конференция по физике плазмы и управляемому термоядерному синтезу
Growth of AlGaN/GaN Heterostructures Using Metal-Rich/N-Rich Growth Modes on Silicon Substrates by the Ammonia MBE
2025 · D. Tuzhilin, V. Nepomilueva, et al. · Russian Microelectronics
Optimization of Electrostatic-Assisted Ultrasonic Spray Coating of Photoresist Film
2025 · V. A. Petukhov, K. A. Tsarik, et al. · Russian Microelectronics
Investigation of the Tin-Oxo Cluster TOC-21 as a Resist for Electron Beam Lithography
2025 · K. G. Nikitin, K. Tsarik, et al. · Russian Microelectronics
Physical Modeling of Integrated Logic Circuit Based on GaN Transistors
2025 · D. M. Kurbanbaeva, O. B. Chukanova, et al. · Russian Microelectronics
Influence of SiC MOSFET design on on-resistance and breakdown voltage
2025 · O. B. Chukanova, K. A. Tsarik · Nanosystems Physics Chemistry Mathematics
PDF
Works count: 45
Citation count: 51
H-index: 5
I10-index:
Year
Topic
Type