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A.T. Krishnan

Observed names: A. Krishnan, A. T. Krishnan, Abhinand Krishnan
ORCID: 0000-0001-9773-3355
Observed ORCID: 0000-0001-9773-3355
OpenAlex ID: A5047673170
Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology
2007 · Wenping Wang, V. Reddy, et al. · IEEE Transactions on Device and Materials Reliability · 364
A comprehensive framework for predictive modeling of negative bias temperature instability
2004 · S. Chakravarthi, A. Krishnan, et al. · IEEE International Reliability Physics Symposium proceedings · 337
Impact of negative bias temperature instability on digital circuit reliability
2003 · V. Reddy, A.T. Krishnan, et al. · IEEE International Reliability Physics Symposium proceedings · 230
NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs]
2004 · A.T. Krishnan, V. Reddy, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 198
Material dependence of hydrogen diffusion: implications for NBTI degradation
2006 · A.T. Krishnan, C. Chancellor, et al. · 181
Observations of NBTI-Induced Atomic-Scale Defects
2006 · J.P. Campbell, P.M. Lenahan, et al. · IEEE Transactions on Device and Materials Reliability · 74
Impact of negative bias temperature instability on product parametric drift
2005 · V. Reddy, J. Carulli, et al. · 72
NBTI: An Atomic-Scale Defect Perspective
2006 · J.P. Campbell, P.M. Lenahan, et al. · IEEE International Reliability Physics Symposium proceedings · 57
Gate Leakage vs. NBTI in Plasma Nitrided Oxides: Characterization, Physical Principles, and Optimization
2006 · A.E. Islam, G. Gupta, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 56
Direct observation of the structure of defect centers involved in the negative bias temperature instability
2005 · J. P. Campbell, P. M. Lenahan, et al. · Applied Physics Letters · 53
Impact of charging damage on negative bias temperature instability
2002 · A.T. Krishnan, V. Reddy, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 52
SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation
2006 · A. T. Krishnan, V. Reddy, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 44
Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors
2008 · J. P. Campbell, P. M. Lenahan, et al. · Journal of Applied Physics · 38
Recent advances and challenges of carbon nano onions (CNOs) for application in supercapacitor devices (SCDs)
2023 · Simran Kaur, Abhinand Krishnan, et al. · Journal of Energy Storage · 33
Location, Structure, and Density of States of NBTI-Induced Defects in Plasma Nitrided pMOSFETs
2007 · J.P. Campbell, P.M. Lenahan, et al. · IEEE International Reliability Physics Symposium proceedings · 31
Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors
1997 · M. S. Shur, H. C Slade, et al. · MRS Proceedings · 25
An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes
2004 · R. Khamankar, H. Bu, et al. · Symposium on VLSI Technology · 21
Spin dependent tunneling spectroscopy in 1.2 nm dielectrics
2010 · J. T. Ryan, P. M. Lenahan, et al. · Journal of Applied Physics · 20
The roles of hydrogen and holes in trap generation and breakdown in ultra-thin SiON dielectrics
2006 · P.E. Nicollian, A.T. Krishnan, et al. · 20
An extensive and improved circuit simulation methodology for NBTI recovery
2010 · Haldun Kufluoglu, V. Reddy, et al. · IEEE International Reliability Physics Symposium proceedings · 19
A Screening Methodology for VMIN Drift in SRAM Arrays with Application to Sub-65nm Nodes
2006 · M. Ball, J. Rosal, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
Energy resolved spin dependent tunneling in 1.2 nm dielectrics
2009 · J. T. Ryan, P. M. Lenahan, et al. · Applied Physics Letters · 16
Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation
2006 · S. Chakravarthi, A.T. Krishnan, et al. · Microelectronics Reliability · 16
Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices
2007 · J. P. Campbell, P. M. Lenahan, et al. · Applied Physics Letters · 15
Impact of gate area on plasma charging damage: the "reverse" antenna effect
2003 · A.T. Krishnan, S. Krishnan, et al. · 14
Works count: 48
Citation count: 2,081
H-index: 19
I10-index: 28
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