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Rob van Dalen

Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge
2007 · P. Goarin, G.E.J. Koops, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 100
Industrialisation of Resurf Stepped Oxide Technology for Power Transistors
2006 · M.A. Gajda, S.W. Hodgskiss, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 52
Short period oscillation of the interlayer exchange coupling in the ferromagnetic regime in Co/Cu/Co(100)
1993 · P. J. H. Bloemen, R. van Dalen, et al. · Journal of Applied Physics · 45
Manufacturing of high aspect-ratio p-n junctions using vapor phase doping for application in multi-Resurf devices
2003 · C. Rochefort, R. van Dalen, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 21
Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs
1992 · P.M. Koenraad, B.F.A. van Hest, et al. · Physica B Condensed Matter · 21
Operator ordering and boundary conditions for valence-band modeling: Application to [110] heterostructures
1997 · Paul N. Stavrinou, Rob van Dalen · Physical review. B, Condensed matter · 18
A methodology to predict the impact of wafer level chip scale package stress on high-precision circuits
2015 · R. van Dalen, H. P. Tuinhout, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
SiGe:C profile optimization for low noise performance
2011 · P.H.C. Magnee, R. van Dalen, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 12
General rules for constructing valence band effective mass Hamiltonians with correct operator order for heterostructures with arbitrary orientations
1998 · R van Dalen, P N Stavrinou · Semiconductor Science and Technology · 12
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Vertical multi-RESURF MOSFETs exhibiting record low specific resistance
2004 · R. van Dalen, C. Rochefort · Technical digest - International Electron Devices Meeting/Technical digest · 11
Punch-through diodes as replacement for low-voltage Zener diodes in ESD protection circuits
2004 · R. van Dalen, G.E.J. Koops, et al. · Journal of Electrostatics · 11
Power Trench MOSFETs with very low specific on-resistance for 25V applications
2007 · Pierre Goarin, Rob van Dalen, et al. · Solid-State Electronics · 10
Hot carrier degradation of HV-SOI devices under off-and on-state current conditions
2011 · R. van Dalen, S. Dhar, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 9
Vertical RESURF Diodes Manufactured by Deep-Trench Etch and Vapor-Phase Doping
2004 · C. Rochefort, R. van Dalen · IEEE Electron Device Letters · 9
Using multiplication to evaluate HCI degradation in HV-SOI devices
2010 · R. van Dalen, A. Heringa, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8
Design and use of an array-based test structure to characterize mechanical stress effects caused by WLCSP solder bumps
2016 · Hans Tuinhout, Rob van Dalen · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 6
QUBiC generation 9, a new BiCMOS process optimized for mmWave applications
2015 · Joost Melai, Peter Magnee, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 5
Layout and spacer optimization for high-frequency low-noise performance in HBT's
2010 · T. Vanhoucke, J.J.T.M. Donkers, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 5
Power trench MOSFETs with very low specific on-resistance for 25V applications
2006 · Pierre Goarin, Rob van Dalen, et al. · European Solid-State Device Research Conference · 5
Breaking the silicon limit using semi-insulating Resurf layers
2002 · R. van Dalen, C. Rochefort, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Virtual technology for RF process and device development
2011 · T. Vanhoucke, D.B.M. Klaassen, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 4
Using thin emitters to control BVce0 effects in punch-through diodes for ESD protection
2002 · R van Dalen, G.A.M Hurkx, et al. · Journal of Electrostatics · 4
Fabrication and optical properties of GaAs/AlGaAs quantum dot grown in tetrahedral-shaped recesses on GaAs (111)B substrates by MOVPE
2000 · Tomoko Tsujikawa, Seiichiro Mori, et al. · Physica E Low-dimensional Systems and Nanostructures · 4
Study of Biased Temperature Instabilities in LDMOST technologies
2018 · Guoqiao Tao, R. Koster, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3
Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflow
2012 · H. Mertens, P. H. C. Magnee, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 3
Works count: 36
Citation count: 408
H-index: 11
I10-index: 12
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