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Author

Hisatsugu Kurita

Institution: ROHM
Observed institution: ROHM
ORCID: 0009-0009-6165-0297
Observed ORCID: 0009-0009-6165-0297
OpenAlex ID: A5048564997
Effect of N2-Anneal Temperature on Silicon Nitride Film: (I) Time-Dependent Dielectric Breakdown and ESR Evaluations
2022 · Hisatsugu Kurita, Masataka Nakamura, et al. · ECS Transactions · 2
PDF
Two Specific Behaviors of Breakdown Occurrence Depending on N2 Annealing Temperature in Poly-Si/SiN/Poly-Si Capacitors
2023 · Hisatsugu Kurita, Masataka Nakamura, et al. · ECS Journal of Solid State Science and Technology
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(Digital Presentation) Effect of N2-Anneal Temperature on Silicon Nitride Film: (II) Fine Structures of ESR Spectrum and FTIR
2022 · Hayato Miyagawa, Yoshiaki Kamigaki, et al. · ECS Meeting Abstracts
Effect of N2-Anneal Temperature on Silicon Nitride Film: (I) Time-Dependent Dielectric Breakdown and ESR Evaluations
2022 · Hisatsugu Kurita, Masataka Nakamura, et al. · ECS Meeting Abstracts
(Digital Presentation) Effect of N2-Anneal Temperature on Silicon Nitride Film: (II) Fine Structures of ESR Spectrum and FTIR
2022 · Hayato Miyagawa, Yoshiaki Kamigaki, et al. · ECS Transactions
PDF
LPCVD SiN Film Breakdown and N 2 -anneal Temperature(I)TDDB and ESR Evaluations
2021 · Hisatsugu Kurita, Masataka Nakamura, et al. · The Japan Society of Applied Physics
LPCVD SiN Film Breakdown and N 2 -anneal Temperature (II): ESR and FTIR Evaluations
2021 · Hayato Miyagawa, Hisatsugu Kurita, et al. · The Japan Society of Applied Physics
Works count: 7
Citation count: 2
H-index: 1
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