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P. A. Dementev

Observed names: Dement ev, P.A., Dementev P. A., Dementev P.A., Dementev, P.A., P A Dement'ev, P A Dementev, P. A. Dement'ev, P. A. Dement’ev, P.A. Dementev, P.A. Dement׳ev, P.A. Dement’ev, Peter A. Dementev, Peter A. Dementev, Peter Dementev, Petr A. Dementev, Petr Dement’ev, П.А. Дементьев, Петр Александрович Дементьев
Institution: Ioffe Institute
ORCID: 0000-0001-6162-2071
Observed ORCID: 0000-0001-6162-2071
OpenAlex ID: A5048597351
Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system
2010 · Konstantin Moiseev, Petr Dement’ev, et al. · Journal of Crystal Growth · 14
Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum
2011 · Sergey P. Lebedev, V.N. Petrov, et al. · Materials science forum · 13
Study of multigraphene films prepared by sublimation on the sic surface
2010 · A. A. Lebedev, I. S. Kotousova, et al. · Physics of the Solid State · 12
Traps in the Nanocomposite Layer of Silicon–Silicon Dioxide and Their Effect on the Luminescent Properties
2019 · P. A. Dement’ev, E. V. Ivanova, et al. · Physics of the Solid State · 11
Modification of the p-GaP(001) work function by surface dipole bonds formed in sulfide solution
2019 · Mikhail V. Lebedev, Peter A. Dementev, et al. · Journal of Materials Chemistry C · 11
Effect of sulfur passivation of InSb (0 0 1) substrates on molecular-beam homoepitaxy
2015 · V.A. Solov’ev, I.V. Sedova, et al. · Applied Surface Science · 11
Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
2019 · I. A. Eliseyev, V. Yu. Davydov, et al. · Semiconductors · 10
Carbon-Based Aromatic-Like Nanostructures on the Vicinal SiC Surfaces Induced by Ba Adsorption
2019 · G. V. Benemanskaya, P. A. Dementev, et al. · ECS Journal of Solid State Science and Technology · 10
Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy
2013 · V. V. Romanov, P. A. Dement’ev, et al. · Semiconductors · 10
TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface
2012 · N.A. Bert, V.N. Nevedomsky, et al. · Applied Surface Science · 10
A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface
2019 · G. V. Benemanskaya, P. A. Dement’ev, et al. · Technical Physics Letters · 9
Investigation of a Contamination Film Formed by the Electron Beam Irradiation
2019 · K. N. Orekhova, Yu. M. Serov, et al. · Technical Physics · 8
Self-glowing single crystal diamond activated with carbon-14: First synthesis and characterization
2023 · Sergey N. Bocharov, Boris E. Burakov, et al. · Diamond and Related Materials · 6
Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions
2019 · M. V. Lebedev, T. V. Lvova, et al. · Semiconductors · 6
Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix
2014 · K.D. Moiseev, V.V. Romanov, et al. · Journal of Crystal Growth · 6
Comparison of graphene films grown on 6H-SiC and 4H-SiC substrates
2019 · Sergey P. Lebedev, Dmitry G. Amel’chuk, et al. · Fullerenes Nanotubes and Carbon Nanostructures · 5
Surface morphology control of the SiC (0001) substrate during the graphene growth
2019 · S. P. Lebedev, D. G. Amel’chuk, et al. · Fullerenes Nanotubes and Carbon Nanostructures · 5
Soft x-ray photoemission spectroscopy of the Ba atomic layer deposition on the ceramic multiferroic BiFeO 3
2016 · G.V. Benemanskaya, P.A. Dementev, et al. · Applied Surface Science · 5
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
2016 · Ya. A. Parkhomenko, P. A. Dement’ev, et al. · Semiconductors · 5
Synchrotron-radiation photoemission study of the ultrathin Ba/3C–SiC(111) interface
2015 · S.А. Kukushkin, G.V. Benemanskaya, et al. · Journal of Physics and Chemistry of Solids · 5
Raman scattering and low-frequency noise in epitaxial graphene chips
2020 · I A Eliseyev, A S Usikov, et al. · Journal of Physics Conference Series · 4
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Investigation of the Hydrogen Etching Effect of the SiC Surface on the Formation of Graphene Films
2019 · S. P. Lebedev, I. S. Barash, et al. · Technical Physics · 4
Synchrotron-based photoemission study of electronic structure of the Cs/GaN ultrathin interface
2017 · G.V. Benemanskaya, S.А. Kukushkin, et al. · Solid State Communications · 4
Chemical modification of InN surface with sulfide solution
2017 · Peter A. Dementev, Tatiana V. Lvova, et al. · Applied Surface Science · 4
Dual mechanism of photoresponse in composite Si–Au nanolayers on crystalline silicon
2016 · Olga Ken, Denis Yavsin, et al. · physica status solidi (a) · 4
Works count: 106
Citation count: 267
H-index: 10
I10-index: 10
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