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Ningyang Liu

Dual functions of gradient phosphate polyanion doping on improving the electrochemical performance of Ni-rich LiNi0.6Co0.2Mn0.2O2 cathode at high cut-off voltage and high temperature
2019 · Qiwen Ran, Hongyuan Zhao, et al. · Electrochimica Acta · 88
High-Quality AlN Film Grown on Sputtered AlN/Sapphire via Growth-Mode Modification
2018 · Chenguang He, Wei Zhao, et al. · Crystal Growth & Design · 62
Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes
2011 · Lei Wang, Cimang Lu, et al. · Optics Express · 62
Wafer‐Scale Micro‐LEDs Transferred onto an Adhesive Film for Planar and Flexible Displays
2020 · Zhangxu Pan, Chan Guo, et al. · Advanced Materials Technologies · 60
Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes
2012 · Wei Yang, Ding Li, et al. · Applied Physics Letters · 55
High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates
2017 · Chenguang He, Wei Zhao, et al. · ACS Applied Materials & Interfaces · 42
Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents
2013 · Cimang Lu, Lei Wang, et al. · Journal of Applied Physics · 38
Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes
2012 · Lei Liu, Lei Wang, et al. · Journal of Applied Physics · 37
Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures
2011 · Lei Liu, Lei Wang, et al. · Journal of Applied Physics · 37
Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier
2018 · Longfei He, Wei Zhao, et al. · Optics Letters · 33
High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes
2009 · Lei Wang, Rui Li, et al. · Applied Physics Letters · 31
Quasi-vertical GaN heterojunction diodes with p-NiO anodes deposited by sputtering and post-annealing
2020 · Yuan Ren, Liuan Li, et al. · Vacuum · 29
Point-Defect Distribution and Transformation Near the Surfaces of AlGaN Films Grown by MOCVD
2019 · Ningyang Liu, Qiao Wang, et al. · The Journal of Physical Chemistry C · 19
Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer
2010 · Lei Wang, Rui Li, et al. · Applied Physics Letters · 19
Analysis of electrical properties in Ni/GaN schottky contacts on nonpolar/semipolar GaN free-standing substrates
2021 · Yuan Ren, Zhiyuan He, et al. · Journal of Alloys and Compounds · 18
Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection
2021 · Chenguang He, Hualong Wu, et al. · Crystal Growth & Design · 18
Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes
2018 · Lei Wang, Ningyang Liu, et al. · IEEE Transactions on Nuclear Science · 17
Remarkably improved photoelectric performance of AlGaN-based deep ultraviolet luminescence by using dual-triangle quantum barriers
2020 · Qiao Wang, Longfei He, et al. · Optics Communications · 14
Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids
2020 · Chenguang He, Wei Zhao, et al. · Journal of Physics D Applied Physics · 14
Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density
2022 · Kang Zhang, Hualong Wu, et al. · Journal of Alloys and Compounds · 9
Comparison of 10 MeV electron beam radiation effect on InGaN/GaN and GaN/AlGaN multiple quantum wells
2019 · Qingxuan Li, Bo Li, et al. · Journal of Luminescence · 9
Low etching damage surface obtained by a mixed etching method and the influence of surface states on the C–V characteristics of AlGaN/GaN Schottky barrier diodes
2022 · Chuan Cheng, Yuan Ren, et al. · Materials Science in Semiconductor Processing · 8
Comparison of X-Ray and Proton Irradiation Effects on the Characteristics of InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes
2020 · Lei Wang, Ningyang Liu, et al. · IEEE Transactions on Nuclear Science · 8
Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well
2021 · Qiao Wang, Kang Zhang, et al. · Journal of Electronic Materials · 7
Performance of LIF neuron circuit based on threshold switching memristors
2025 · Le An, Ting Jiang, et al. · Materials Science in Semiconductor Processing · 6
Works count: 44
Citation count: 785
H-index: 17
I10-index: 19
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