Author

Julian Duchaine

Observed names: Duchaine, Julian, J. Duchaine

Institution: Ibs (France)

Observed institutions: Ibs (France), Laboratoire d'Électronique des Technologies de l'Information

OpenAlex ID: A5049550994

4H-silicon carbide thin junction based ultraviolet photodetectors

2012 · S. Biondo, M. Lazar, et al. · Thin Solid Films · 15

Plasma doping of silicon fin structures

2011 · S. Felch, C. Hobbs, et al. · International Workshop on Junction Technology · 13

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

2012 · Stéphane Biondo, Laurent Ottaviani, et al. · Materials science forum · 10

Integration of a plasma doping PULSION® process into a fully depleted SOI transistor flow chart

2011 · Julian Duchaine, Frederic Gonzatti, et al. · International Workshop on Junction Technology · 5

Optimization of Etching∕Deposition Phenomena for BF[sub 3] and B[sub 2]H[sub 6] Plasma Doping using PULSION®

2011 · S. B. Felch, H. Etienne, et al. · AIP conference proceedings · 5

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

2012 · Stéphane Biondo, Mihai Lazar, et al. · Materials science forum · 4

Plasma Implantation Technology for Upcoming Ultra Shallow and Highly Doped Fully Depleted Silicon On Insulator Transistors

2011 · Frederic Gonzatti, Frederic Milési, et al. · AIP conference proceedings · 4

Improved NiSi contacts on Si by CF4 plasma immersion ion implantation for 14nm node MOSFETs

2015 · Haitao Zhang, Julian Duchaine, et al. · IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference (IITC/MAM) · 3

High temperature Plasma Immersion Ion Implantation of AsH3 using PULSION®

2014 · Frank Torregrosa, Julian Duchaine, et al. · International Conference on Ion Implantation Technology · 3

Simulation of plasma immersion ion implantation

2011 · A. Burenkov, P. Pichler, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 3

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

2011 · Laurent Ottaviani, Stéphane Biondo, et al. · Advanced materials research · 3

Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

2011 · Laurent Ottaviani, Stéphane Biondo, et al. · AIP conference proceedings · 3

Characterization of arsenic PIII implants in FinFETs by LEXES, SIMS and STEM-EDX

2014 · Kim-Anh Bui-Thi Meura, Frank Torregrosa, et al. · International Conference on Ion Implantation Technology · 2

Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers

2012 · Laurent Ottaviani, Michel Kazan, et al. · Materials science forum · 2

4H-SiC P +N UV photodiodes: A comparison between beam and plasma doping processes

2011 · Biondo, Stéphane, Ottaviani, Laurent, et al. · HAL · 1

A Hybrid Implant Doping Technique with Plasma Immersion Ion Implant (PIII) Process for 10 nm Fin Cannel of 3D-FET

2016 · Yi-Ju Chen, Ying-Tsan Tang, et al. · International Conference on Ion Implantation Technology

Study of AsH3 Plasma Immersion Ion Implantation using PULSION®

2014 · Julian Duchaine, Frank Torregrosa, et al. · International Conference on Ion Implantation Technology

Caractérisation de l'implantation par immersion plasma avec pulsion(r) et intégration dans la fabrication de transistors FD-SOI et Trigate

2012 · Julian Duchaine · Thèses en ligne de l'Université Toulouse III (Université Toulouse III)

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Influence of P+ layer parameters on 4H-SiC UV PiN photodetector characteristics

2011 · Ottaviani, Laurent, Biondo, Stéphane, et al. · HAL

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Works count: 19

Citation count: 76

H-index: 5

I10-index: 3