Author

W. Gebhardt

Observed names: Gebhardt, S., Gebhardt, Sylvia, S Gebhardt, S. E. Gebhardt, S. Gebhardt, S.E. Gebhardt, Sylvia E. Gebhardt, Sylvia Gebhardt, W Gebhardt, W. GEBHARDT

Institution: Fraunhofer Institute for Ceramic Technologies and Systems

Observed institutions: University of Stuttgart, Goethe University Frankfurt, Centre National de la Recherche Scientifique, Philipps University of Marburg, Friedrich-Alexander-Universität Erlangen-Nürnberg, Purdue University West Lafayette, Max Planck Institute for Solid State Research, Technicolor (France), Fraunhofer Institute for Nondestructive Testing, Fraunhofer Institute for Ceramic Technologies and Systems, Fraunhofer-Gesellschaft, University of Regensburg, University of Duisburg-Essen, University of Glasgow

ORCID: 0000-0002-3497-7595

Observed ORCID: 0000-0002-3497-7595

OpenAlex ID: A5049779996

Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films

1999 · R. Pässler, E. Griebl, et al. · Journal of Applied Physics · 142

MOCVD layer growth of ZnO using DMZn and tertiary butanol

1998 · B Hahn, G Heindel, et al. · Semiconductor Science and Technology · 86

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PZT thick films for sensor and actuator applications

2007 · Sylvia Gebhardt, Lutz Seffner, et al. · Journal of the European Ceramic Society · 85

Temperature dependence of F-centre absorption and emission

1964 · W. Gebhardt, H. Kühnert · Physics Letters · 81

Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

1990 · H.P. Wagner, W. Kuhn, et al. · Journal of Crystal Growth · 70

Gap Energies, Exciton Binding Energies and Band Offsets in Ternary ZnMgSe Compounds and ZnSe/ZnMgSe Heterostructures

1997 · M. W�rz, E. Griebl, et al. · physica status solidi (b) · 66

The Temperature Dependence of the F‐Centre Absorption and Emission in Five Alkali Halides

1966 · W. Gebhardt, H. Kühnert · physica status solidi (b) · 63

Acoustic Devices for Particle and Cell Manipulation and Sensing

2014 · Yongqiang Qiu, Han Wang, et al. · Sensors · 61

Cu(In,Ga)Se2 solar cells with a ZnSe buffer layer: interface characterization by quantum efficiency measurements

1999 · F. Engelhardt, L. Bornemann, et al. · Progress in Photovoltaics Research and Applications · 60

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors

2000 · S. Kaiser, M. Jakob, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 59

Effect of dopants on the electrocaloric effect of 0.92 Pb(Mg1/3Nb2/3)O3–0.08 PbTiO3 ceramics

2015 · C. Molin, M. Sanlialp, et al. · Journal of the European Ceramic Society · 58

Study of the 2.0-eV photoluminescence band in Cd1−xMnxTe semiconductor alloys

1982 · M. M. Moriwaki, W. M. Becker, et al. · Physical review. B, Condensed matter · 56

High resolution transmission electron microscopy determination of Cd diffusion in single quantum well structures

1995 · A. Rosenauer, T. Reisinger, et al. · Journal of Crystal Growth · 55

High pressure X-ray investigations of phase transitions in Cd1−xMnxTe

1985 · K. Strössner, S. Ves, et al. · Solid State Communications · 54

The MOVPE growth and doping of ZnTe

1991 · W Kuhn, H P Wagner, et al. · Semiconductor Science and Technology · 52

Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy

1994 · K. Wolf, H. Stanzl, et al. · Journal of Crystal Growth · 51