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Atsushi Kawaharazuka
Observed names:
A. Kawaharazuka,
Atsushi Kawaharazuka Atsushi Kawaharazuka
Institution:
Waseda University
Observed institutions:
Waseda University,
NTT (Japan),
Japan Science and Technology Agency,
NTT Basic Research Laboratories,
Paul Drude Institute for Solid State Electronics,
Waseda Research Institute for Science and Engineering,
Waseda Institute for Advanced Study
show all 7
OpenAlex ID:
A5049823043
Works
46
Awards
3
Electrical spin injection from ferromagnetic MnAs metal layers into GaAs
2002
·
M. Ramsteiner
, H. Y. Hao
, et al.
·
Physical review. B, Condensed matter
·
194
Spin injection from Fe3Si into GaAs
2004
·
A. Kawaharazuka
, M. Ramsteiner
, et al.
·
Applied Physics Letters
·
100
Epitaxial growth of (001) hybrid structures for spintronic application
2005
·
J. Herfort
, H.-P. Schönherr
, et al.
·
Journal of Crystal Growth
·
30
Free GaAs surfaces studied using a back-gated undoped GaAs/AlxGa1−xAs heterostructure
2001
·
A. Kawaharazuka
, T. Saku
, et al.
·
Physical review. B, Condensed matter
·
17
PDF
MBE growth of GaN on MgO substrate
2007
·
Ryotaro Suzuki
, Atsushi Kawaharazuka
, et al.
·
Journal of Crystal Growth
·
16
Formation of a two-dimensional electron gas in an inverted undoped heterostructure with a shallow channel depth
2000
·
A. Kawaharazuka
, T. Saku
, et al.
·
Journal of Applied Physics
·
16
Successful growth of Cu2Se-free CuGaSe2 by migration-enhanced epitaxy
2012
·
Miki Fujita
, Tomohiro Sato
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
11
Be and Mg co-doping in GaN
2007
·
A. Kawaharazuka
, T. Tanimoto
, et al.
·
Journal of Crystal Growth
·
11
Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy
2011
·
Miki Fujita
, Atsushi Kawaharazuka
, et al.
·
Japanese Journal of Applied Physics
·
10
PDF
Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy
2010
·
A. Kawaharazuka
, K. Onomitsu
, et al.
·
Journal of Crystal Growth
·
10
Effect of the MgO substrate on the growth of GaN
2008
·
R. Suzuki
, A. Kawaharazuka
, et al.
·
Journal of Crystal Growth
·
10
Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy
2015
·
Sathiabama Thiru
, Masaki Asakawa
, et al.
·
AIP Advances
·
9
PDF
Photoluminescence study of Si doped and undoped Chalcopyrite CuGaSe2 thin films
2013
·
Sathiabama Thiru
, Miki Fujita
, et al.
·
Applied Physics A
·
9
Characteristics of CuGaSe2 layers grown on GaAs substrates
2013
·
Miki Fujita
, Atsushi Kawaharazuka
, et al.
·
Journal of Crystal Growth
·
9
RHEED intensity oscillation of C60 layer epitaxial growth
2008
·
Jiro Nishinaga
, Atsushi Kawaharazuka
, et al.
·
Journal of Crystal Growth
·
9
Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy
2015
·
Sathiabama Thiru
, Masaki Asakawa
, et al.
·
Journal of Crystal Growth
·
8
Effect of Excitons in AlGaAs/GaAs Superlattice Solar Cells
2011
·
Jiro Nishinaga
, Atsushi Kawaharazuka
, et al.
·
Japanese Journal of Applied Physics
·
7
PDF
Investigation of C60 Epitaxial Growth Mechanism on GaAs Substrates
2009
·
Jiro Nishinaga
, Atsushi Kawaharazuka
, et al.
·
Japanese Journal of Applied Physics
·
7
PDF
Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure
2002
·
A. Kawaharazuka
, T. Saku
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
·
7
Behavior of Ga atoms deposited on GaAs (111)B and (111)A surfaces
2017
·
A. Kawaharazuka
, Y. Horikoshi
·
Journal of Crystal Growth
·
6
High absorption efficiency of AlGaAs/GaAs superlattice solar cells
2015
·
Jiro Nishinaga
, Atsushi Kawaharazuka
, et al.
·
Japanese Journal of Applied Physics
·
6
PDF
Effects of surface barrier layer in AlGaAs/GaAs solar cells
2015
·
Hiroyuki Urabe
, Makoto Kuramoto
, et al.
·
Journal of Crystal Growth
·
6
Characteristics of multivalent impurity doped C60 films grown by MBE
2007
·
Jiro Nishinaga
, Tomoyuki Aihara
, et al.
·
Journal of Crystal Growth
·
6
PDF
Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy
2009
·
Atsushi Kawaharazuka
, Tadashi Yoshizaki
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
5
Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources
2008
·
A. Kawaharazuka
, I. Yoshiba
, et al.
·
Applied Surface Science
·
5
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Works count:
46
Citation count:
550
H-index:
10
I10-index:
11
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