Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
S. Baskaran
Observed names:
Baskaran S,
Baskaran Subramanian,
S Baskaran
ORCID:
0000-0002-5122-638X
Observed ORCID:
0000-0002-5122-638X
OpenAlex ID:
A5049914663
Modeling of 2DEG sheet carrier density and DC characteristics in spacer based AlGaN/AlN/GaN HEMT devices
2013
·
S. Baskaran
, A. Mohanbabu
, et al.
·
Superlattices and Microstructures
·
34
Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
2020
·
P. Murugapandiyan
, A. Mohanbabu
, et al.
·
Journal of Science Advanced Materials and Devices
·
30
PDF
Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD)
2020
·
Baskaran Subramanian
, Mohanbabu Anandan
, et al.
·
Journal of Electronic Materials
·
30
UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications
2022
·
S. Baskaran
, M. Shunmugathammal
, et al.
·
Silicon
·
23
Silicon Nitride Back Barrier in AlGaN/GaN HEMT to Enhance Breakdown Voltage for Satellite Applications
2020
·
V. Janakiraman
, S. Baskaran
, et al.
·
Silicon
·
15
Design and development of AlGaN/GaN HEMT for biosensing applications for detection of cancers, tumors, and kidney malfunctioning
2021
·
A. Mohanbabu
, M. Saravanan
, et al.
·
Elsevier eBooks
·
7
Noise analysis of double gate composite InAs based HEMTs for high frequency applications
2020
·
R. Poornachandran
, N. Mohan Kumar
, et al.
·
Microsystem Technologies
·
4
Noise performance of Gate engineered double gate MOSFETs for analog and RF applications
2010
·
N. Mohankumar
, Binit Syamal
, et al.
·
International Conference on Electrical and Computer Engineering (ICECE)
·
4
Impact of High-K and Gate-to-Drain Spacing in InGaAs/InAs/InGaAs-based DG-MOS-HEMT for Low-leakage and High-frequency Applications
2021
·
S. Baskaran
, R. Saravana Kumar
, et al.
·
IETE Journal of Research
·
3
E‐Mode‐Operated Advanced III‐V Heterostructure Quantum Well Devices for Analog/RF and High‐Power Switching Applications
2023
·
A. Mohanbabu
, N. Vinodhkumar
, et al.
·
Wiley eBooks
·
1
RETRACTED ARTICLE: H∞-dCNN: Enhancing the SNR Using Deep Learning Algorithm in Wireless Communication System
2021
·
C. Priya
, D. Kumutha
, et al.
·
Arabian Journal for Science and Engineering
·
1
PDF
DC and RF Characterization of InAs based Double Delta Doped MOSHEMT Device
2018
·
R Saravana Kumar
, R Poornachandran
, et al.
·
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
·
1
Enhanced InGaAs/InAs/InGaAs Composite Channel MOSHEMT Device Performance by Using Double Gate Recessed Structure with HfO2 as Dielectric Materials
2021
·
R. Saravana Kumar
, N. Mohankumar
, et al.
·
Lecture notes in networks and systems
Noise Characterization of InAs Based DG-HEMT Devices for RF Applications
2018
·
R Poornachandran
, N Mohankumar
, et al.
·
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
DC and Breakdown Characterization of InGaAs based on HEMTs
2017
·
Sindhuja S
, Salma S
, et al.
·
The SIJ Transactions on Computer Networks & Communication Engineering
Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures
2015
·
N. Mohankumar
, A. Mohanbabu
, et al.
·
Advanced materials research
Inverted InAlAs/InGaAs MOSHEMT with Nanoscale Gate Length for Terahertz Applications
2015
·
S. Kirubashree
, S. Baskaran
·
Digital Signal Processing
ALN Barrier with High Sheet Carrier Density for High Power Application
2015
·
A. Uma
, S. Baskaran
·
CiiT international journal of programmable device circuits and systems
Simulation of Nanoscale INSB Based HEMT Device for Low Power and High Frequency Applications
2015
·
A. Ashok Kumar
, S. Baskaran
·
CiiT international journal of biometrics and bioinformatics
Show more works
View as search
Works count:
19
Citation count:
153
H-index:
6
I10-index:
5
Year
Topic
Type
