Author

M.D. Lammert

Observed names: M. Lammert, Michael D. Lammert

Institution: TRW (United States)

Observed institutions: Purdue University West Lafayette, TRW (United States)

OpenAlex ID: A5050208504

The interdigitated back contact solar cell: A silicon solar cell for use in concentrated sunlight

1977 · M.D. Lammert, R.J. Schwartz · IEEE Transactions on Electron Devices · 268

Silicon solar cells for high concentration applications

1975 · R.J. Schwartz, M.D. Lammert · Technical digest - International Electron Devices Meeting/Technical digest · 60

Commercial heterojunction bipolar transistor production by molecular beam epitaxy

1996 · Dwight C. Streit, Aaron K. Oki, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 17

Sub-1.3 dB noise figure direct-coupled MMIC LNAs using a high current-gain 1-μm GaAs HBT technology

2002 · K.W. Kobayashi, L.T. Tran, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 14

ESD sensitivity study of various diode protection circuits implemented in a production 1 μm GaAs HBT technology

2003 · F.M. Yamada, A.K. Oki, et al. · GaAs Reliability Workshop · 9

A novel 12-24 GHz broadband HBT distributed active balanced mixer

2002 · K.W. Kobayashi, L.T. Tran, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 8

Reliability performance of components and ICs from a production 1 μm GaAs HBT process

2003 · F.M. Yamada, A.K. Oki, et al. · GaAs Reliability Workshop · 7

A DC-3 GHz cryogenic AlGaAs/GaAs HBT low noise MMIC amplifier with 0.15 dB noise figure

2003 · K.W. Kobayashi, J.E. Fernandez, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6

InP HBT technology and applications

2002 · D.C. Streit, J.C. Cowles, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 6

Future trends of HBT technology for commercial and defense applications

2002 · A.K. Oki, D.C. Streit, et al. · IEEE MTT-S International Topical Symposium on Technologies for Wireless Applications · 3

Reliable ICs fabricated using a production GaAs HBT process for military and commercial applications

2002 · F.M. Yamada, A.K. Oki, et al. · IEEE Military Communications Conference (MILCOM) · 3

An 18-22-GHz down-converter based on GaAs/AlGaAs HBT-Schottky diode integrated technology

1997 · K.W. Kobayashi, L.T. Tran, et al. · IEEE Microwave and Guided Wave Letters · 3

A 0.5-16 GHz capacitively coupled HBT medium power amplifier MMIC with active bias regulation

2002 · K.W. Kobayashi, A.K. Oki, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 2

An actively balanced GaAs HBT-Schottky mixer for 3-V wireless applications

1997 · K.W. Kobayashi, L.T. Tran, et al. · IEEE Microwave and Guided Wave Letters · 1

Transimpedance bandwidth performance of an HBT loss-compensatedcoplanar waveguide distributed amplifier

1996 · K.W. Kobayashi, L.T. Tran, et al. · Electronics Letters · 1

A Silicon Solar Cell for Use at High Illumination Intensities.

1975 · M.D. Lammert · Purdue e-Pubs (Purdue University System) · 1

Performance of germanium pin-photovoltaic cells at high incident radiation intensity

1975 · E. Kittl, M.D. Lammert, et al. · 1

Optimising a GaAs HBT amplifier for maximum gain efficiency

1996 · K.W. Kobayashi, L.T. Tran, et al. · Electronics Letters

Thermophotovoltaic cells. Final report, June 1972--December 1973

1974 · R. J. Schwartz, Nathan F. Gardner, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Works count: 19

Citation count: 410

H-index: 7

I10-index: 4