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Daniel Steckler

Observed name: D. Steckler
ORCID: 0000-0001-9645-1807
Observed ORCID: 0000-0001-9645-1807
OpenAlex ID: A5051307422
Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz
2021 · S. Lischke, A. Peczek, et al. · Nature Photonics · 381
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Ge Photodiode with -3 dB OE Bandwidth of 110 GHz for PIC and ePIC Platforms
2020 · S. Lischke, A. Peczek, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
Germanium Photodiodes With 3-dB Bandwidths >110 GHz and L-Band Responsivity of >0.7 A/W
2024 · Daniel Steckler, Stefan Lischke, et al. · IEEE Photonics Technology Letters · 15
Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond
2025 · Daniel Steckler, Stefan Lischke, et al. · Nature Communications · 14
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Monolithic Integration of 80-GHz Ge Photodetectors and 100-GHz Ge Electro-Absorption Modulators in a Photonic BiCMOS Technology
2024 · Daniel Steckler, Stefan Lischke, et al. · IEEE Transactions on Electron Devices · 10
Publisher Correction: Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz
2021 · S. Lischke, A. Peczek, et al. · Nature Photonics · 7
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Versatile Germanium Photodiodes with 3dB Bandwidths from 110 GHz to 265 GHz
2022 · Anna Peczek, Stefan Lischke, et al. · ECS Transactions · 6
Ge-fin Photodiodes with 3-dB Bandwidths Well Beyond 110 GHz for O-Band Receiver Subsystems
2024 · Daniel Steckler, Stefan Lischke, et al. · Springer proceedings in physics · 5
Germanium Fin Photodiode with 3dB-Bandwidth >110 GHz and High L-Band Responsivity
2023 · D. Steckler, S. Lischke, et al. · IEEE Silicon Photonics Conference (SiPhotonics) · 4
Photonic BiCMOS Technology with 80 GHz Ge Photo Detectors and 100 GHz Ge Electro-Absorption Modulators
2023 · D. Steckler, S. Lischke, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3
Very High-Speed Waveguide Integrated Germanium Photo Detectors
2021 · Stefan Lischke, Anna Peczek, et al. · European Conference on Optical Communication · 3
Alternative fabrication method for Ge-fin photodiodes with 3-dB bandwidths exceeding 110 GHz
2024 · S. Lischke, J. Jose, et al. · IEEE Silicon Photonics Conference (SiPhotonics) · 2
On the dynamic and static extinction ratio of germanium electro-absorption modulators
2024 · Daniel Steckler, Stefan Lischke, et al. · IEEE Silicon Photonics Conference (SiPhotonics) · 1
Ultra-Fast Ge-on-Si Photodetectors
2024 · Stefan Lischke, Daniel Steckler, et al. · Optical Fiber Communication Conference · 1
Initial Ge Growth on Si Delta Layer on Ge Formed by Atomic-Layer Epitaxy
2026 · Kei Kiyose, Daniel Steckler, et al. · International Conference on Solid State Devices and Materials (SSDM)
Silicon Phase Shifter Modeling for Electronic-Photonic Co-Simulation in a 250 nm EPIC BiCMOS Technology
2026 · Tobias Schwabe, Daniel Steckler, et al. · Research Square
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Monolithic Photonic BiCMOS Technology with 400-GHz SiGe-HBTs and Germanium-Fin Photodiodes
2026 · S. Lischke, B. Heinemann, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Atomic layer epitaxy of Si in Ge
2025 · Yuji Yamamoto, Wei-Chen Wen, et al. · Japanese Journal of Applied Physics
Atomic Layer Epitaxy of Si in Ge
2025 · Yuji Yamamoto, Wei-Chen Wen, et al. · International Conference on Solid State Devices and Materials (SSDM)
Ultra-fast Germanium Photodiodes (invited)
2023 · Stefan Lischke, Anna Peczek, et al. · Conference on Lasers and Electro-Optics
Versatile Germanium Photodiodes with 3dB Bandwidths from 110 GHz to 265 GHz
2022 · Anna Peczek, Stefan Lischke, et al. · ECS Meeting Abstracts
Waveguide-Coupled Ge Photodiodes with 3-dB Bandwidth ≥110 GHz
2021 · Stefan Lischke, Anna Peczek, et al. · IEEE Photonics Conference
Works count: 22
Citation count: 475
H-index: 6
I10-index: 5
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