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Hagyoul Bae
Observed names:
Bae, Hagyoul,
H. Bae,
Hag-Youl Bae
Institutions:
Samsung Advanced Institute of Technology (South Korea),
Jeonbuk National University
Observed institutions:
Kookmin University,
Korea Advanced Institute of Science and Technology,
Purdue University West Lafayette,
Samsung (South Korea),
Samsung Advanced Institute of Technology (South Korea),
Samsung Electronics (South Korea),
Jeonbuk National University
show all 7
ORCID:
0000-0002-2462-4198
Observed ORCID:
0000-0002-2462-4198
OpenAlex ID:
A5054179190
Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment
2022
·
Seunghun Kang
, Woo-Sung Jang
, et al.
·
Science
·
214
PDF
First Demonstration of a Logic-Process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications
2018
·
Myungsoo Seo
, Min-Ho Kang
, et al.
·
IEEE Electron Device Letters
·
164
Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls
2021
·
Duk-Hyun Choe
, Sunghyun Kim
, et al.
·
Materials Today
·
123
Direct Observation of a Carbon Filament in Water-Resistant Organic Memory
2015
·
Byung-Hyun Lee
, Hagyoul Bae
, et al.
·
ACS Nano
·
108
Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics
2017
·
Hagyoul Bae
, Byung Chul Jang
, et al.
·
Nano Letters
·
78
Negative differential capacitance in ultrathin ferroelectric hafnia
2023
·
Sanghyun Jo
, Hyangsook Lee
, et al.
·
Nature Electronics
·
73
High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate
2019
·
Jinhyun Noh
, Peide D. Ye
, et al.
·
IEEE Journal of the Electron Devices Society
·
70
PDF
Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications
2023
·
Jaewook Yoo
, Hyeonjun Song
, et al.
·
Electronics
·
59
PDF
Solar-Blind UV Photodetector Based on Atomic Layer-Deposited Cu2O and Nanomembrane β-Ga2O3 pn Oxide Heterojunction
2019
·
Hagyoul Bae
, Adam Charnas
, et al.
·
ACS Omega
·
56
Single-Scan Monochromatic Photonic Capacitance-Voltage Technique for Extraction of Subgap DOS Over the Bandgap in Amorphous Semiconductor TFTs
2013
·
Hagyoul Bae
, Hyunjun Choi
, et al.
·
IEEE Electron Device Letters
·
53
Self-sustainable wind speed sensor system with omni-directional wind based triboelectric generator
2018
·
Sang-Jae Park
, SangHan Lee
, et al.
·
Nano Energy
·
52
Foldable and Disposable Memory on Paper
2016
·
Byung-Hyun Lee
, Dong-Il Lee
, et al.
·
Scientific Reports
·
52
PDF
Sub-ns Polarization Switching in 25nm FE FinFET toward Post CPU and Spatial-Energetic Mapping of Traps for Enhanced Endurance
2020
·
Hagyoul Bae
, Seung Geol Nam
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
50
Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors
2019
·
Jae Kwon
, Byung-Hyun Lee
, et al.
·
ACS Sensors
·
48
A Recoverable Synapse Device Using a Three‐Dimensional Silicon Transistor
2018
·
Jae Hur
, Byung Chul Jang
, et al.
·
Advanced Functional Materials
·
47
Nano-electromechanical Switch Based on a Physical Unclonable Function for Highly Robust and Stable Performance in Harsh Environments
2017
·
Kyu-Man Hwang
, Jun-Young Park
, et al.
·
ACS Nano
·
46
In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories
2023
·
Atif Jan
, Thomas Rembert
, et al.
·
Advanced Functional Materials
·
45
PDF
A Novel Scalable Energy-Efficient Synaptic Device: Crossbar Ferroelectric Semiconductor Junction
2019
·
M. Si
, Y. Luo
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
45
Bioinspired Polydopamine‐Based Resistive‐Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications
2019
·
Hagyoul Bae
, Daewon Kim
, et al.
·
Advanced Materials Technologies
·
43
Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application
2016
·
Hagyoul Bae
, Byung-Hyun Lee
, et al.
·
Scientific Reports
·
43
PDF
First Experimental Demonstration of Robust HZO/β-Ga₂O₃ Ferroelectric Field-Effect Transistors as Synaptic Devices for Artificial Intelligence Applications in a High-Temperature Environment
2021
·
Jinhyun Noh
, Hagyoul Bae
, et al.
·
IEEE Transactions on Electron Devices
·
42
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels
2017
·
Jun-Young Park
, Byung-Hyun Lee
, et al.
·
IEEE Transactions on Electron Devices
·
40
Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors
2012
·
Hagyoul Bae
, Sungwoo Jun
, et al.
·
IEEE Electron Device Letters
·
40
Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors
2013
·
Sungwoo Jun
, Chunhyung Jo
, et al.
·
IEEE Electron Device Letters
·
39
Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric
2016
·
Dongil Lee
, Jinsu Yoon
, et al.
·
Scientific Reports
·
38
PDF
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Works count:
157
Citation count:
2,602
H-index:
29
I10-index:
64
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