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Author

Ayumi Onaka‐Masada

Observed name: Ayumi Onaka-Masada
ORCID: 0000-0003-3610-6504
Observed ORCID: 0000-0003-3610-6504
OpenAlex ID: A5055051913
Proximity gettering of C 3 H 5 carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities
2016 · Kazunari Kurita, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 52
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Proximity gettering technology for advanced CMOS image sensors using carbon cluster ion‐implantation technique: A review
2017 · Kazunari Kurita, Takeshi Kadono, et al. · physica status solidi (a) · 49
Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors
2019 · Kazunari Kurita, Takeshi Kadono, et al. · Sensors · 27
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Hydrogen passivation for reduction of SiO2/Si interface state density using hydrocarbon-molecular-ion-implanted silicon wafers
2020 · Ryosuke Okuyama, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 22
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Proximity gettering of silicon wafers using CH3O multielement molecular ion implantation technique
2018 · Ryo Hirose, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 15
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Reduction of Dark Current in CMOS Image Sensor Pixels Using Hydrocarbon-Molecular-Ion-Implanted Double Epitaxial Si Wafers
2020 · Ayumi Onaka-Masada, Takeshi Kadono, et al. · Sensors · 14
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Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors
2018 · Ayumi Onaka-Masada, Toshiro Nakai, et al. · Japanese Journal of Applied Physics · 14
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Low-temperature annealing behavior of iron-related deep levels in n-type silicon wafers
2016 · Ayumi Onaka-Masada, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 14
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Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review
2021 · Kazunari Kurita, Takeshi Kadono, et al. · IEEE Journal of the Electron Devices Society · 13
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A Review of Proximity Gettering Technology for CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation
2019 · Kazunari Kurita, Takeshi Kadono, et al. · Sensors and Materials · 10
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Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging
2018 · Ayumi Onaka-Masada, Ryosuke Okuyama, et al. · Japanese Journal of Applied Physics · 9
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Room-temperature bonding of epitaxial layer to carbon-cluster ion-implanted silicon wafers for CMOS image sensors
2018 · Yoshihiro Koga, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 9
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Proximity gettering design of silicon wafers using silicon hydride and hydrocarbon mixture molecular ion implantation technique
2021 · Ryo Hirose, Takeshi Kadono, et al. · Materials Science in Semiconductor Processing · 8
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Effect of hydrocarbon molecular ion size for amorphous region formation analyzed by X-ray photoelectron spectroscopy
2020 · Takeshi Kadono, Ryosuke Okuyama, et al. · Japanese Journal of Applied Physics · 7
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Diffusion kinetic of hydrogen in CH3O-molecular-ion-implanted silicon wafer for CMOS image sensors
2018 · Ryosuke Okuyama, Ayumi Onaka-Masada, et al. · Japanese Journal of Applied Physics · 7
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Recrystallization model of discrete amorphous regions in C3H5-molecular-ion-implanted silicon substrate surface analyzed by X-ray photoelectron spectroscopy
2022 · Koji Kobayashi, Ryosuke Okuyama, et al. · Japanese Journal of Applied Physics · 6
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Proximity gettering technique using CH3O multielement molecular ion implantation for the reduction of the white spot defect density in CMOS image sensor
2019 · Ryo Hirose, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 6
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Influence of oxygen on copper gettering in hydrocarbon molecular ion implanted region using atom probe tomography
2020 · Satoshi Shigematsu, Ryosuke Okuyama, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 5
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Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO2/Si Structure Fabricated Using H+-Implanted Si Substrate
2020 · Akihiro Suzuki, Kazutoshi Takahashi, et al. · Journal of The Electrochemical Society · 5
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Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor
2018 · Ayumi Onaka-Masada, Ryosuke Okuyama, et al. · IEEE Journal of the Electron Devices Society · 5
Erratum: “Proximity gettering of C 3 H 5 carbon cluster ion-implanted silicon wafers for CMOS image sensors: Gettering effects of transition metal, oxygen, and hydrogen impurities”
2017 · Kazunari Kurita, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 5
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Molecular and Atomic Hydrogen Diffusion Behavior by Reaction Kinetic Analysis in Projection Range of Hydrocarbon Molecular Ion for CMOS Image Sensors
2019 · Ryosuke Okuyama, Ayumi Onaka‐Masada, et al. · physica status solidi (a) · 4
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Influence of carbon on Ni gettering in C2Hx+ and SiHy+ mixture molecular-ion-implanted silicon epitaxial wafer
2024 · Ryo Hirose, Ayumi Onaka-Masada, et al. · Materials Science in Semiconductor Processing · 3
Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C3 H5-Molecular-Ion-Implanted Silicon Substrate Surface
2023 · Koji Kobayashi, Ryosuke Okuyama, et al. · International Workshop on Junction Technology · 3
Corrigendum: “Proximity gettering technique using CH 3 O multielement molecular ion implantation for white spot defect density reduction in CMOS image sensor” [Jpn. J. Appl. Phys. 58 , 091002 (2019)]
2019 · Ryo Hirose, Takeshi Kadono, et al. · Japanese Journal of Applied Physics · 3
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Works count: 45
Citation count: 333
H-index: 10
I10-index: 10
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