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Hung-Hsiang Cheng

Observed names: Cheng, H. H., H Cheng, H H Cheng, H. Cheng, H. H. CHENG, H. H. Cheng, H.-H. Cheng, H.H Cheng, H.H. Cheng, Hung H. Cheng, Hung Hsiang Cheng
Observed institutions: United States Air Force Research Laboratory, 3M (United States), National Sun Yat-sen University, National Yang Ming Chiao Tung University, National Taiwan University, Advanced Semiconductor Engineering (Taiwan), Wright-Patterson Air Force Base, University of Massachusetts Boston, U.S. Air Force Research Laboratory Sensors Directorate, Wright Laboratory
ORCID: 0000-0001-6752-3429
Observed ORCID: 0000-0001-6752-3429
OpenAlex ID: A5055131768
Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser
2010 · G. Sun, R. A. Soref, et al. · Journal of Applied Physics · 174
GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
2013 · H. H. Tseng, H. Li, et al. · Applied Physics Letters · 159
Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
2010 · G. Sun, R. A. Soref, et al. · Optics Express · 155
Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
2013 · H. Li, Y. X. Cui, et al. · Applied Physics Letters · 128
Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer
2017 · Yu-Hui Huang, Guo-En Chang, et al. · Optics Letters · 93
Electrically Injected GeSn Vertical-Cavity Surface Emitters on Silicon-on-Insulator Platforms
2019 · Bo-Jun Huang, Chen-Yang Chang, et al. · ACS Photonics · 69
GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms
2018 · Bo-Jun Huang, Jun-Han Lin, et al. · Optics Letters · 61
Dark Current Analysis on GeSn p-i-n Photodetectors
2023 · Soumava Ghosh, Greg Sun, et al. · Sensors · 51
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GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band
2020 · Cheng-Hsun Tsai, Bo-Jun Huang, et al. · Optics Letters · 50
Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors
2021 · Guo-En Chang, Shui-Qing Yu, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 47
Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base
2020 · Wei-Ting Hung, Devesh Barshilia, et al. · Optics Letters · 46
GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics
2021 · Cheng-Hsun Tsai, Kuan-Chih Lin, et al. · Optics Letters · 44
Characteristics of Sn segregation in Ge/GeSn heterostructures
2014 · H. Li, C. Chang, et al. · Applied Physics Letters · 43
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Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
2011 · I. S. Yu, T. H. Wu, et al. · AIP Advances · 43
Photodegradation of CdxZn1−xSe quantum wells
1995 · G. M. Haugen, S. Guha, et al. · Applied Physics Letters · 41
Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
2021 · Yun-Da Hsieh, Jun-Han Lin, et al. · Communications Materials · 40
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Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy
2002 · S. W. Lee, H. C. Chen, et al. · Journal of Applied Physics · 40
Structural and optical characteristics of Ge_1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers
2014 · Jia-Zhi Chen, H. Li, et al. · Optical Materials Express · 39
Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics
2022 · Soumava Ghosh, Radhika Bansal, et al. · Sensors · 36
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Planar GeSn photodiode for high-detectivity photodetection at 1550 nm
2020 · Kuo-Chih Lee, Min-Xiang Lin, et al. · Applied Physics Letters · 36
Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal Electrodes
2021 · Gang Wu, Hee-Suk Chung, et al. · ACS Applied Materials & Interfaces · 35
Ge_0975Sn_0025 320 × 256 imager chip for 16–19 μm infrared vision
2016 · Chiao Chang, Hui Li, et al. · Applied Optics · 34
Advanced Fanout Packaging Technology for Hybrid Substrate Integration
2022 · Lihong Cao, Teck Chong Lee, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 29
Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination
2016 · C. Chang, H. Li, et al. · Applied Physics Letters · 29
Electrical Contact Barriers between a Three-Dimensional Metal and Layered SnS2
2020 · Chengzhai Lv, Wenjie Yan, et al. · ACS Applied Materials & Interfaces · 28
Works count: 121
Citation count: 2,151
H-index: 27
I10-index: 50
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