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Author

Borish Moirangthem

Institution: SR University
ORCID: 0000-0001-8087-6456
Observed ORCID: 0000-0001-8087-6456
OpenAlex ID: A5055362471
Bipolar resistive switching behavior of bilayer β-Ga2O3/WO3 thin film memristor device
2024 · Mir Waqas Alam, Ayangla Jamir, et al. · Journal of Alloys and Compounds · 27
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
2023 · Borish Moirangthem, Pheiroijam Nonglen Meitei, et al. · Journal of Materials Science Materials in Electronics · 21
Investigation on structural and photodetection properties of Gd2O3 thin films after annealing
2022 · Ph. Nonglen Meitei, Borish Moirangthem, et al. · Journal of Materials Science Materials in Electronics · 21
Fast switching photodetector based on HfO2 thin film deposited using electron beam evaporation technique
2023 · Borish Moirangthem, Mir Waqas Alam, et al. · Applied Physics A · 16
Improved performance for Ag nanoparticles-assisted HfO2 thin film-based memcapacitive device
2024 · Borish Moirangthem, Najla Khaled Almulhem, et al. · Sensors and Actuators A Physical · 12
Enhanced resistive switching performance in WO3/NiO bilayer thin film
2025 · Naorem Kheljit Singh, Borish Moirangthem, et al. · Sensors and Actuators A Physical · 4
Electrical behavior of GLAD synthesis WO3-βGa2O3 nanocluster
2026 · B. Shakila, M. Prakash, et al. · Journal of Materials Science Materials in Electronics · 1
High-performance Nb2O5 thin film photodetector fabricated using the electron beam evaporation method
2026 · Yengkhom Chandrika Devi, Borish Moirangthem, et al. · Applied Physics A
Study on Structural and Optical Properties of Ta2O5 Nanocluster
2023 · Elangbam Rameshwar Singh, Borish Moirangthem, et al. · Springer Proceedings in Materials
Works count: 9
Citation count: 102
H-index: 5
I10-index: 5
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