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Dmitry V. Kolyada

Observed names: D V Kolyada, D. Kolyada, D. V. Kolyada, D.V. Kolyada, Dmitry Kolyada, Kolyada D.V., Kolyada, Dmitry, Д.В. Коляда
ORCID: 0009-0005-6833-2102
Observed ORCID: 0009-0005-6833-2102
OpenAlex ID: A5055509976
Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate
2022 · Vyacheslav A. Timofeev, Vladimir I. Mashanov, et al. · Applied Surface Science · 14
Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers
2024 · Vyacheslav Timofeev, Ilya Skvortsov, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 9
Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range
2024 · Vyacheslav A. Timofeev, Ilya V. Skvortsov, et al. · Applied Surface Science · 8
Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells
2023 · Vyacheslav A. Timofeev, Vladimir I. Mashanov, et al. · Materials Today Physics · 7
Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots
2024 · Vyacheslav Timofeev, Ilya Skvortsov, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 6
Fourier-transform infrared photoreflectance spectroscopy of the InSb/InAs/In(Ga,Al)As/GaAs metamorphic heterostructures with a superlattice waveguide
2022 · D. D. Firsov, A. I. Luferau, et al. · Journal of the Optical Society of America B · 3
Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates
2020 · P S Avdienko, D V Kolyada, et al. · Journal of Physics Conference Series · 2
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Multiple quantum wells with ultrathin high-Sn fraction GeSn layers: Structural and optical properties
2025 · Ilya V. Skvortsov, Vladimir I. Mashanov, et al. · Next Materials · 1
Zinc oxide nanorods for biosensing: study of the temperature conditions for formation
2025 · N. O. Sitkov, A. A. Ryabko, et al. · Biomedical Engineering · 1
Features of Optical Transitions in GeSiSn/Si Multiple Quantum Wells
2022 · V. A. Timofeev, V. I. Mashanov, et al. · Optoelectronics Instrumentation and Data Processing · 1
Investigation of the effect of annealing and composition on infrared photoluminescence of GeSiSn/Si multiple quantum well nanoheterostructures
2022 · Kolyada D.V., Firsov D.D., et al. · Физика и техника полупроводников · 1
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Epitaxial growth of GeSn/Si nanoheterostructures with ultrathin high-Sn content GeSn layers
2026 · Ilya V. Skvortsov, Vyacheslav A. Timofeev, et al. · Applied Surface Science
Temperature-dependent infrared photoluminescence study of GeSn/Si and GeSiSn/Si multiple quantum wells
2026 · Chumanov, Ivan, Firsov, Dmitrii, et al. · St. Petersburg State Polytechnical University Journal
Effect of rectangular aluminum nanoantennas on the optical emission of GeSiSn/Si multiple quantum wells
2025 · Semyon A. Khakhulin, Dmitry V. Kolyada, et al. · Izvestiya vysshikh uchebnykh zavedenii Fizika
Structural and optical properties of heterostructures based on group IV materials (Ge, Si, Sn)
2025 · V. Timofeev, I. Skvortsov, et al. · CyberLeninK (CyberLeninka)
Impact of Sulphide Passivation of the Substrate on the Photoluminescent Properties of InAs Autoepitaxial Layers
2024 · D. V. Kolyada, D. D. Firsov, et al. · Russian Microelectronics
Impact of substrate sulphide passivation on photoluminescent properties of InAs autoepitaxial layers
2024 · D. V. Kolyada, D. D. Firsov, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
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Investigation of infrared photoluminescence spectra of Ge1-x-y Si x Sn y /Si nanostructures
2022 · D V Kolyada, A A Karaborchev, et al. · Journal of Physics Conference Series
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Исследование влияния отжига и состава на инфракрасную фотолюминесценцию наногетероструктур GeSiSn/Si с множественными квантовыми ямами
2022 · Д.В. Коляда, Д.Д. Фирсов, et al. · Физика и техника полупроводников
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Features of Optical Transitions in Gesisn/si Multiple Quantum Wells
2022 · V.A. Timofeev, V.I. Mashanov, et al. · Optoelectronics Instrumentation and Data Processing
Structural and Optical Properties of a Hybrid Material Based on Tin Oxides and Multilayer Periodic Structures with Pseudomorphic GeSiSn Layers
2021 · V. A. Timofeev, V. I. Mashanov, et al. · Russian Physics Journal
GaAs(001)基板上に分子ビームエピタクシーで成長させた準2D GaTe層の構造的および光学的性質【JST・京大機械翻訳】
2020 · P. S. Avdienko, Dmitry V. Kolyada, et al. · Journal of Physics Conference Series
Works count: 23
Citation count: 53
H-index: 5
I10-index: 1
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