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Madhuchhanda Brahma
Institution:
GlobalFoundries (United States)
Observed institutions:
The University of Texas at Dallas,
GlobalFoundries (United States),
Indian Institute of Science Bangalore,
Indian Institute of Engineering Science and Technology, Shibpur
ORCID:
0000-0003-3991-6377
Observed ORCID:
0000-0003-3991-6377
OpenAlex ID:
A5055609186
Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs
2014
·
Ram Krishna Ghosh
, Madhuchhanda Brahma
, et al.
·
IEEE Transactions on Electron Devices
·
47
Scalability assessment of Group-IV mono-chalcogenide based tunnel FET
2018
·
Madhuchhanda Brahma
, Arnab Kabiraj
, et al.
·
Scientific Reports
·
33
PDF
The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials
2023
·
Madhuchhanda Brahma
, Maarten L. Van de Put
, et al.
·
npj 2D Materials and Applications
·
18
PDF
Phonon limited anisotropic quantum transport in phosphorene field effect transistors
2019
·
Madhuchhanda Brahma
, Arnab Kabiraj
, et al.
·
Journal of Applied Physics
·
14
Role of electrostatic doping on the resistance of metal and two-dimensional materials edge contacts
2024
·
Madhuchhanda Brahma
, Maarten L. Van de Put
, et al.
·
Physical Review Research
·
7
Modeling Contact Resistivity in Monolayer Molybdenum disulfide Edge contacts
2021
·
Madhuchhanda Brahma
, Maarten L. Van de Put
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
5
Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes
2018
·
Madhuchhanda Brahma
, Marc Bescond
, et al.
·
IEEE Transactions on Electron Devices
·
5
Contact Resistance in Monolayer MoS2 Edge-Contacts: “Electrostatic” vs. Substitutional Doping
2024
·
Madhuchhanda Brahma
, Maarten L. van de Put
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
1
Contacts to Two-dimensional Materials: Image Forces, Dielectric Environment, and Back-gate
2022
·
Madhuchhanda Brahma
, Maarten L. Van de Put
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
1
Insights on Anisotropic Dissipative Quantum Transport in n-Type Phosphorene MOSFET
2019
·
Madhuchhanda Brahma
, Arnab Kabiraj
, et al.
·
International Conference on VLSI Design
·
1
Mass-Manufacturable Germanium Photodetectors for Beyond-448-Gbps-Class Operation on a Monolithic Silicon Photonics Platform
2026
·
Yusheng Bian
, Sujith Chandran
, et al.
·
Research Square
PDF
Versatile 300 mm Monolithic Ge Photodetectors for Ultra-High-Speed and High-Power Datacom/CPO Receivers
2026
·
Yusheng Bian
, Sujith Chandran
, et al.
·
Conference on Lasers and Electro-Optics
Multiscale Modeling of Quantum Transport in 2D Material Based MoS Transistors
2021
·
Madhuchhanda Brahma
Modeling the channel potential and threshold voltage of a fully depleted Double Gate Junctionless FET
2012
·
Parthasarathi Gupta
, Debasree Burman
, et al.
·
International Conference on Communications, Devices and Intelligent Systems (CODIS)
Analytical study of the effect of asymmetric gate bias on the performance of double gate TFET
2012
·
Parthasarathi Gupta
, Jayita Das
, et al.
·
International Conference on Communications, Devices and Intelligent Systems (CODIS)
Performance analysis and simulation study of a Sandwiched Barrier Tunnel FET
2012
·
Partha Sarathi Gupta
, Madhuchhanda Brahma
, et al.
·
International Conference on Communications, Devices and Intelligent Systems (CODIS)
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Works count:
16
Citation count:
132
H-index:
5
I10-index:
4
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