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Swaroop Ganguly

Observed names: Ganguly Swaroop, Ganguly, Swaroop, S Ganguly, S. Ganguly
ORCID: 0000-0003-1184-8421
Observed ORCID: 0000-0003-1184-8421
OpenAlex ID: A5055626238
Effect of Band-to-Band Tunneling on Junctionless Transistors
2012 · Suresh Gundapaneni, Mohit Bajaj, et al. · IEEE Transactions on Electron Devices · 252
Bulk Planar Junctionless Transistor (BPJLT): An Attractive Device Alternative for Scaling
2011 · Suresh Gundapaneni, Swaroop Ganguly, et al. · IEEE Electron Device Letters · 244
Graphene nanosheets derived from plastic waste for the application of DSSCs and supercapacitors
2021 · Sandeep Pandey, Manoj Karakoti, et al. · Scientific Reports · 155
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Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High- $\kappa$ Spacers
2011 · Suresh Gundapaneni, Swaroop Ganguly, et al. · IEEE Electron Device Letters · 149
Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
2012 · A. Kamath, T. Patil, et al. · IEEE Electron Device Letters · 89
Threshold Voltage Variability in Nanosheet GAA Transistors
2019 · P. Harsha Vardhan, Amita, et al. · IEEE Transactions on Electron Devices · 61
Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
2018 · Yogendra K. Yadav, Bhanu B. Upadhyay, et al. · IEEE Electron Device Letters · 56
Thermally Grown TiO 2 and Al 2 O 3 for GaN-Based MOS-HEMTs
2018 · Akanksha Rawat, Mudassar Meer, et al. · IEEE Transactions on Electron Devices · 43
Impact of Relative Gate Position on DC and RF Characteristics of High Performance AlGaN/GaN HEMTs
2020 · Yogendra K. Yadav, Bhanu B. Upadhyay, et al. · IEEE Transactions on Electron Devices · 42
Electrical spin injection using GaCrN in a GaN based spin light emitting diode
2013 · D. Banerjee, R. Adari, et al. · Applied Physics Letters · 38
Realization of high quality silicon nitride deposition at low temperatures
2019 · V. K. Surana, N. Bhardwaj, et al. · Journal of Applied Physics · 35
Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric
2019 · Akanksha Rawat, Vivek Kumar Surana, et al. · IEEE Transactions on Electron Devices · 30
Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFET
2017 · P. Harsha Vardhan, Sushant Mittal, et al. · IEEE Transactions on Electron Devices · 30
Band gap bowing and band offsets in relaxed and strained Si1−xGex alloys by employing a new nonlinear interpolation scheme
2013 · Saurabh Sant, Saurabh Lodha, et al. · Journal of Applied Physics · 30
Discrete Molecular Copper(II) Complex for Efficient Piezoelectric Energy Harvesting Above Room‐Temperature
2022 · Rajashi Haldar, Ajay Kumar, et al. · Angewandte Chemie International Edition · 27
Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON/I OFF Operating at 473 K
2021 · Ritam Sarkar, Bhanu B. Upadhyay, et al. · IEEE Transactions on Electron Devices · 26
Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy
2017 · S. Chouksey, S. Sankaranarayanan, et al. · Nano Letters · 26
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
2019 · Ritam Sarkar, S. Bhunia, et al. · Applied Physics Letters · 22
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Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures
2017 · Yogendra Kumar Yadav, Bhanu B. Upadhyay, et al. · physica status solidi (a) · 22
Enhanced UV Photodetector Efficiency with a ZnO/Ga2O3 Heterojunction
2025 · Shashi Pandey, Swaroop Ganguly, et al. · ACS Applied Electronic Materials · 20
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Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime
2020 · Dhiman Nag, Ritam Sarkar, et al. · Nanotechnology · 18
Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs
2019 · Kuldeep Takhar, Bhanu B. Upadhyay, et al. · Applied Surface Science · 18
State transitions and decoherence in the avian compass
2015 · Vishvendra Singh Poonia, Dipankar Saha, et al. · Physical Review E · 18
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Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes
2005 · Swaroop Ganguly, L. F. Register, et al. · Physical Review B · 18
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Determination of strain relaxation in InGaN/GaN nanowalls from quantum confinement and exciton binding energy dependent photoluminescence peak
2018 · Sandeep Sankaranarayanan, Shonal Chouksey, et al. · Scientific Reports · 17
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Works count: 216
Citation count: 2,387
H-index: 20
I10-index: 62
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