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Author

Shazma Ali

ORCID: 0000-0001-7960-9158
Observed ORCID: 0000-0001-7960-9158
OpenAlex ID: A5055935375
High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer
2021 · Tariq Jamil, Muhammad Usman, et al. · Journal of Electronic Materials · 14
Perspective on light-fidelity and visible light communication
2022 · Sibghatullah Khan, Muhammad Usman, et al. · Journal of Laser Applications · 12
Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier
2021 · Noor Ul Islam, Muhammad Usman, et al. · Optik · 11
Performance enhancement of ultraviolet-C AlGaN laser diode
2022 · Shazma Ali, Muhammad Usman · The European Physical Journal Plus · 7
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Recycling Technologies for Extracting Gallium from Light-Emitting Diodes
2025 · Laraib Mustafa, Muhammad Usman, et al. · Photonics · 5
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High performance near-infrared III-Arsenide laser diodes with p-AlGaAs barriers
2023 · Sana Saeed, Muhammad Usman, et al. · Optical Materials · 5
Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes
2022 · Muhammad Usman, Shahzeb Malik, et al. · Optical Review · 5
Improving the gain and efficiency of ultraviolet-C laser diodes
2022 · Shazma Ali, Muhammad Usman · Journal of Materials Science · 5
Engineering last quantum barrier/electron blocking layer interface to improve green light-emitting diodes
2021 · Munaza Munsif, Muhammad Usman, et al. · Optical and Quantum Electronics · 5
Dimensional downscaling and quantum engineering: A path to high-performance micro-LEDs
2024 · Shazma Ali, Muhammad Usman · Journal of Luminescence · 4
Dual-gate AlGaN channel HEMTs: advancements in E-mode performance with N-shaped graded composite barriers
2024 · Wagma Hidayat, Muhammad Usman, et al. · Electronic Structure · 4
Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes
2024 · Jamshad Bashir, Muhammad Usman, et al. · Journal of Information Display · 4
High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes
2024 · Syeda Wageeha Shakir, Muhammad Usman, et al. · ECS Journal of Solid State Science and Technology · 4
Engineered p-type AlGaN layer for enhanced deep ultraviolet light-emitting diodes performance
2026 · Aiman Fatima, Muhammad Usman, et al. · Journal of Luminescence · 3
Epitaxial analysis of GaInP/AlGaInP red light-emitting diodes with ternary AlGaP quantum barriers for quantum efficiency enhancement
2024 · Anum, Muhammad Usman, et al. · Physica Scripta · 3
Effect of optimized quaternary waveguides on the performance of deep ultraviolet laser diodes
2024 · Shazma Ali, Muhammad Usman, et al. · Journal of Luminescence · 3
Grading waveguide to improve the performance of ultraviolet laser diodes
2023 · Shazma Ali, Muhammad Usman, et al. · Journal of Luminescence · 3
Designing p-region of AlGaN ultraviolet light-emitting diodes for the improved performance
2023 · Saad Rasheed, Muhammad Usman, et al. · Physica B Condensed Matter · 3
MOCVD Growth of Next-Generation III–V Semiconductor Devices: In Review
2026 · Zoya Noor, Muhammad Usman, et al. · Photonics · 2
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AI-powered deep ultraviolet laser diode design for resource-efficient optimization
2025 · Asima Sarwar, Muhammad Usman, et al. · Journal of Computational Electronics · 2
Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED
2024 · Wagma Hidayat, Muhammad Usman, et al. · 2
Tailoring the performance of GaN-based yellow light-emitting diodes
2022 · Muhammad Usman, Sibghatullah Khan, et al. · Physica B Condensed Matter · 2
High radiative recombination in GaN-based yellow light-emitting diodes
2022 · Sibghatullah Khan, Muhammad Usman, et al. · International Journal of Modern Physics B · 2
Improvement in optoelectronic properties of AlGaAs/InGaAs laser in near-infrared region
2022 · Sana Saeed, Muhammad Usman, et al. · Frontiers in Optics + Laser Science (FiO, LS) · 2
High-performance AlGaN-based nanowire light-emitting diodes through an engineered insertion layer in the electron blocking layer
2026 · Anuda Bibi, Muhammad Usman, et al. · Journal of Luminescence · 1
Works count: 58
Citation count: 121
H-index: 5
I10-index: 3
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